Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method

A. H. Ramelan; E. M. Goldys; P. Arifin

doi:10.1109/COMMAD.2010.5699729

Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method

A. H. Ramelan, E. M. Goldys, P. Arifin

MQ Photonics Research Centre

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

1 Citation (Scopus)

Abstract

The GaSb-based material system is attractive for application in photovoltaic (PV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the PV cells are fabricated using epitaxial layers and hence are expensive. To reduce the cost, Zn diffusion using elemental vapors in a semiclosed diffusion system is conducted. In this paper, we present studies carried out on Zn diffusion into n-type (Te-doped) GaSb substrates in an open tube diffusion furnace. The diffusion was carried out at a temperature of 600°C, for a diffusion time from 4 to 12 hours. The diffused layers were characterized by current-voltage and capacitance-voltage measurements.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	183-184
Number of pages	2
ISBN (Print)	9781424473328
DOIs	https://doi.org/10.1109/COMMAD.2010.5699729
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Other

Other	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

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10.1109/COMMAD.2010.5699729

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Ramelan, A. H., Goldys, E. M., & Arifin, P. (2010). Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 183-184). [5699729] Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2010.5699729

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title = "Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method",

abstract = "The GaSb-based material system is attractive for application in photovoltaic (PV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the PV cells are fabricated using epitaxial layers and hence are expensive. To reduce the cost, Zn diffusion using elemental vapors in a semiclosed diffusion system is conducted. In this paper, we present studies carried out on Zn diffusion into n-type (Te-doped) GaSb substrates in an open tube diffusion furnace. The diffusion was carried out at a temperature of 600°C, for a diffusion time from 4 to 12 hours. The diffused layers were characterized by current-voltage and capacitance-voltage measurements.",

author = "Ramelan, {A. H.} and Goldys, {E. M.} and P. Arifin",

year = "2010",

doi = "10.1109/COMMAD.2010.5699729",

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booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

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note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

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Ramelan, AH, Goldys, EM & Arifin, P 2010, Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699729, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 183-184, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699729

Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method. / Ramelan, A. H.; Goldys, E. M.; Arifin, P.

2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 183-184 5699729.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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N2 - The GaSb-based material system is attractive for application in photovoltaic (PV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the PV cells are fabricated using epitaxial layers and hence are expensive. To reduce the cost, Zn diffusion using elemental vapors in a semiclosed diffusion system is conducted. In this paper, we present studies carried out on Zn diffusion into n-type (Te-doped) GaSb substrates in an open tube diffusion furnace. The diffusion was carried out at a temperature of 600°C, for a diffusion time from 4 to 12 hours. The diffused layers were characterized by current-voltage and capacitance-voltage measurements.

AB - The GaSb-based material system is attractive for application in photovoltaic (PV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the PV cells are fabricated using epitaxial layers and hence are expensive. To reduce the cost, Zn diffusion using elemental vapors in a semiclosed diffusion system is conducted. In this paper, we present studies carried out on Zn diffusion into n-type (Te-doped) GaSb substrates in an open tube diffusion furnace. The diffusion was carried out at a temperature of 600°C, for a diffusion time from 4 to 12 hours. The diffused layers were characterized by current-voltage and capacitance-voltage measurements.

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BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

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Ramelan AH, Goldys EM, Arifin P. Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2010. p. 183-184. 5699729 https://doi.org/10.1109/COMMAD.2010.5699729

Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method

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