Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method

A. H. Ramelan, E. M. Goldys, P. Arifin

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

The GaSb-based material system is attractive for application in photovoltaic (PV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the PV cells are fabricated using epitaxial layers and hence are expensive. To reduce the cost, Zn diffusion using elemental vapors in a semiclosed diffusion system is conducted. In this paper, we present studies carried out on Zn diffusion into n-type (Te-doped) GaSb substrates in an open tube diffusion furnace. The diffusion was carried out at a temperature of 600°C, for a diffusion time from 4 to 12 hours. The diffused layers were characterized by current-voltage and capacitance-voltage measurements.

Original languageEnglish
Title of host publication2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages183-184
Number of pages2
ISBN (Print)9781424473328
DOIs
Publication statusPublished - 2010
Event2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia
Duration: 12 Dec 201015 Dec 2010

Other

Other2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
CountryAustralia
CityCanberra, ACT
Period12/12/1015/12/10

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