Abstract
The GaSb-based material system is attractive for application in photovoltaic (PV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the PV cells are fabricated using epitaxial layers and hence are expensive. To reduce the cost, Zn diffusion using elemental vapors in a semiclosed diffusion system is conducted. In this paper, we present studies carried out on Zn diffusion into n-type (Te-doped) GaSb substrates in an open tube diffusion furnace. The diffusion was carried out at a temperature of 600°C, for a diffusion time from 4 to 12 hours. The diffused layers were characterized by current-voltage and capacitance-voltage measurements.
Original language | English |
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Title of host publication | 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 183-184 |
Number of pages | 2 |
ISBN (Print) | 9781424473328 |
DOIs | |
Publication status | Published - 2010 |
Event | 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010 |
Other
Other | 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 |
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Country/Territory | Australia |
City | Canberra, ACT |
Period | 12/12/10 → 15/12/10 |