Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method

A. H. Ramelan; E. M. Goldys; P. Arifin

doi:10.1109/COMMAD.2010.5699729

Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method

A. H. Ramelan, E. M. Goldys, P. Arifin

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

1 Citation (Scopus)

Abstract

The GaSb-based material system is attractive for application in photovoltaic (PV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the PV cells are fabricated using epitaxial layers and hence are expensive. To reduce the cost, Zn diffusion using elemental vapors in a semiclosed diffusion system is conducted. In this paper, we present studies carried out on Zn diffusion into n-type (Te-doped) GaSb substrates in an open tube diffusion furnace. The diffusion was carried out at a temperature of 600°C, for a diffusion time from 4 to 12 hours. The diffused layers were characterized by current-voltage and capacitance-voltage measurements.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	183-184
Number of pages	2
ISBN (Print)	9781424473328
DOIs	https://doi.org/10.1109/COMMAD.2010.5699729
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Other

Other	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

Access to Document

10.1109/COMMAD.2010.5699729

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method'. Together they form a unique fingerprint.

Cite this

Ramelan, A. H., Goldys, E. M., & Arifin, P. (2010). Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 183-184). [5699729] Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2010.5699729

@inproceedings{a221ce032aed46b39d8327a225365ad2,

title = "Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method",

abstract = "The GaSb-based material system is attractive for application in photovoltaic (PV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the PV cells are fabricated using epitaxial layers and hence are expensive. To reduce the cost, Zn diffusion using elemental vapors in a semiclosed diffusion system is conducted. In this paper, we present studies carried out on Zn diffusion into n-type (Te-doped) GaSb substrates in an open tube diffusion furnace. The diffusion was carried out at a temperature of 600°C, for a diffusion time from 4 to 12 hours. The diffused layers were characterized by current-voltage and capacitance-voltage measurements.",

author = "Ramelan, {A. H.} and Goldys, {E. M.} and P. Arifin",

year = "2010",

doi = "10.1109/COMMAD.2010.5699729",

language = "English",

isbn = "9781424473328",

pages = "183--184",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

}

Ramelan, AH, Goldys, EM & Arifin, P 2010, Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699729, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 183-184, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699729

Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method. / Ramelan, A. H.; Goldys, E. M.; Arifin, P.

2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. Piscataway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2010. p. 183-184 5699729.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

TY - GEN

T1 - Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method

AU - Ramelan, A. H.

AU - Goldys, E. M.

AU - Arifin, P.

PY - 2010

Y1 - 2010

N2 - The GaSb-based material system is attractive for application in photovoltaic (PV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the PV cells are fabricated using epitaxial layers and hence are expensive. To reduce the cost, Zn diffusion using elemental vapors in a semiclosed diffusion system is conducted. In this paper, we present studies carried out on Zn diffusion into n-type (Te-doped) GaSb substrates in an open tube diffusion furnace. The diffusion was carried out at a temperature of 600°C, for a diffusion time from 4 to 12 hours. The diffused layers were characterized by current-voltage and capacitance-voltage measurements.

AB - The GaSb-based material system is attractive for application in photovoltaic (PV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the PV cells are fabricated using epitaxial layers and hence are expensive. To reduce the cost, Zn diffusion using elemental vapors in a semiclosed diffusion system is conducted. In this paper, we present studies carried out on Zn diffusion into n-type (Te-doped) GaSb substrates in an open tube diffusion furnace. The diffusion was carried out at a temperature of 600°C, for a diffusion time from 4 to 12 hours. The diffused layers were characterized by current-voltage and capacitance-voltage measurements.

UR - http://www.scopus.com/inward/record.url?scp=79951738108&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2010.5699729

DO - 10.1109/COMMAD.2010.5699729

M3 - Conference proceeding contribution

SN - 9781424473328

SP - 183

EP - 184

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ

ER -

Ramelan AH, Goldys EM, Arifin P. Electrical properties of p-n junction GaSb fabricated from spin coating using Zn-diffusion method. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). 2010. p. 183-184. 5699729 https://doi.org/10.1109/COMMAD.2010.5699729