Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes

A. H. Ramelan; K. S A Butcher; E. M. Goldys; T. L. Tansley; K. Tomsia

doi:10.1109/COMMAD.2000.1022907

Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes

A. H. Ramelan, K. S A Butcher, E. M. Goldys, T. L. Tansley, K. Tomsia

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

11 Downloads (Pure)

Abstract

Dimethyltelluride has been used as a dopant source for GaSb epilayers grown by atmospheric pressure MOCVD (Metalorganic Chemical Vapour Deposition). Schottky diodes were fabricated using Al barriers and Au-Ge-Ni as Ohmic contact. Doping densities of about 4.1×10¹⁸ cm^-3 and barrier heights of 0.63 eV are found from C-V measurements, compared to 0.59 eV determined from room temperature I-V measurements. Room temperature ideality factors are around 1.3, while its variation with temperature demonstrates the role of electron tunnelling through the depletion barrier. The carrier concentration probed by C-V is confirmed by van der Pauw Hall measurements. The effect of thermal annealing on the diodes is also reported.

Original language	English
Title of host publication	COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
Editors	Leonard Broekman, Brian Usher, John Riley
Place of Publication	Washington, DC
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	125-128
Number of pages	4
Volume	2000-January
ISBN (Electronic)	0780366980
DOIs	https://doi.org/10.1109/COMMAD.2000.1022907
Publication status	Published - 2000
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia Duration: 6 Dec 2000 → 8 Dec 2000

Other

Other	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Country/Territory	Australia
City	Bundoora
Period	6/12/00 → 8/12/00

Bibliographical note

Copyright 2002 IEEE. Reprinted from Proceedings of the 2000 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

Access to Document

10.1109/COMMAD.2000.1022907

Publisher version (open access).pdfFinal published version, 157 KB

Cite this

Ramelan, A. H., Butcher, K. S. A., Goldys, E. M., Tansley, T. L., & Tomsia, K. (2000). Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes. In L. Broekman, B. Usher, & J. Riley (Eds.), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices (Vol. 2000-January, pp. 125-128). Article 1022907 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/COMMAD.2000.1022907

Ramelan, A. H. ; Butcher, K. S A ; Goldys, E. M. et al. / Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes. COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. editor / Leonard Broekman ; Brian Usher ; John Riley. Vol. 2000-January Washington, DC : Institute of Electrical and Electronics Engineers (IEEE), 2000. pp. 125-128

@inproceedings{f0e170bc6f5f4d478890be3ff8818e6a,

title = "Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes",

abstract = "Dimethyltelluride has been used as a dopant source for GaSb epilayers grown by atmospheric pressure MOCVD (Metalorganic Chemical Vapour Deposition). Schottky diodes were fabricated using Al barriers and Au-Ge-Ni as Ohmic contact. Doping densities of about 4.1×1018 cm-3 and barrier heights of 0.63 eV are found from C-V measurements, compared to 0.59 eV determined from room temperature I-V measurements. Room temperature ideality factors are around 1.3, while its variation with temperature demonstrates the role of electron tunnelling through the depletion barrier. The carrier concentration probed by C-V is confirmed by van der Pauw Hall measurements. The effect of thermal annealing on the diodes is also reported.",

author = "Ramelan, {A. H.} and Butcher, {K. S A} and Goldys, {E. M.} and Tansley, {T. L.} and K. Tomsia",

note = "Copyright 2002 IEEE. Reprinted from Proceedings of the 2000 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie University{\^a}€{\texttrademark}s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 ; Conference date: 06-12-2000 Through 08-12-2000",

year = "2000",

doi = "10.1109/COMMAD.2000.1022907",

language = "English",

volume = "2000-January",

pages = "125--128",

editor = "Leonard Broekman and Brian Usher and John Riley",

booktitle = "COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

}

Ramelan, AH, Butcher, KSA, Goldys, EM, Tansley, TL & Tomsia, K 2000, Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes. in L Broekman, B Usher & J Riley (eds), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. vol. 2000-January, 1022907, Institute of Electrical and Electronics Engineers (IEEE), Washington, DC, pp. 125-128, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000, Bundoora, Australia, 6/12/00. https://doi.org/10.1109/COMMAD.2000.1022907

Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes. / Ramelan, A. H.; Butcher, K. S A; Goldys, E. M. et al.
COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. ed. / Leonard Broekman; Brian Usher; John Riley. Vol. 2000-January Washington, DC: Institute of Electrical and Electronics Engineers (IEEE), 2000. p. 125-128 1022907.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes

AU - Ramelan, A. H.

AU - Butcher, K. S A

AU - Goldys, E. M.

AU - Tansley, T. L.

AU - Tomsia, K.

N1 - Copyright 2002 IEEE. Reprinted from Proceedings of the 2000 conference on optoelectronic and microelectronic materials and devices. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Macquarie Universityâ€™s products or services. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to [email protected]. By choosing to view this document, you agree to all provisions of the copyright laws protecting it.

PY - 2000

Y1 - 2000

N2 - Dimethyltelluride has been used as a dopant source for GaSb epilayers grown by atmospheric pressure MOCVD (Metalorganic Chemical Vapour Deposition). Schottky diodes were fabricated using Al barriers and Au-Ge-Ni as Ohmic contact. Doping densities of about 4.1×1018 cm-3 and barrier heights of 0.63 eV are found from C-V measurements, compared to 0.59 eV determined from room temperature I-V measurements. Room temperature ideality factors are around 1.3, while its variation with temperature demonstrates the role of electron tunnelling through the depletion barrier. The carrier concentration probed by C-V is confirmed by van der Pauw Hall measurements. The effect of thermal annealing on the diodes is also reported.

AB - Dimethyltelluride has been used as a dopant source for GaSb epilayers grown by atmospheric pressure MOCVD (Metalorganic Chemical Vapour Deposition). Schottky diodes were fabricated using Al barriers and Au-Ge-Ni as Ohmic contact. Doping densities of about 4.1×1018 cm-3 and barrier heights of 0.63 eV are found from C-V measurements, compared to 0.59 eV determined from room temperature I-V measurements. Room temperature ideality factors are around 1.3, while its variation with temperature demonstrates the role of electron tunnelling through the depletion barrier. The carrier concentration probed by C-V is confirmed by van der Pauw Hall measurements. The effect of thermal annealing on the diodes is also reported.

UR - http://www.scopus.com/inward/record.url?scp=84949804544&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2000.1022907

DO - 10.1109/COMMAD.2000.1022907

M3 - Conference proceeding contribution

AN - SCOPUS:84949804544

VL - 2000-January

SP - 125

EP - 128

BT - COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices

A2 - Broekman, Leonard

A2 - Usher, Brian

A2 - Riley, John

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Washington, DC

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000

Y2 - 6 December 2000 through 8 December 2000

ER -

Ramelan AH, Butcher KSA, Goldys EM, Tansley TL, Tomsia K. Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes. In Broekman L, Usher B, Riley J, editors, COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. Vol. 2000-January. Washington, DC: Institute of Electrical and Electronics Engineers (IEEE). 2000. p. 125-128. 1022907 doi: 10.1109/COMMAD.2000.1022907

Electrical properties of Te-doped MOCVD grown GaSb Schottky diodes

Abstract

Other

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this