Electron band structure and optical properties of InN and related alloys

D. Alexandrov, S. Butcher, T. Tansley

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

New metric system called electron metric system having basic metric constant is introduced. The connection between the electron metric system and the external metric system is defined. The symmetry relationships of the multinary semiconductor compound alloys are defined according to the electron metric system. The basic metric constant is found on the basis of diatomic tetrahedral cell. The electron wave vector in the new system is found and the electron energy states are determined. It is shown correlation between them in the multinary crystal. LCAO electron band structures of Inₓ Al₁₋ₓ N and of Inₓ Ga₁₋ₓ N are presented. The phenomenon tunnel optical absorption is investigated in Inₓ Al₁₋ₓ N, in Inₓ Ga₁₋ₓ N, in InN containing oxygen and in non-stoichiometric InN. It is found the optical absorption edges begin in energies 0.2-1.62 eV that are lower than the energy band gaps due to this phenomenon. Existence of excitons of the structure is shown in these semiconductors and it is found that the peaks of the PL spectra correspond to annihilation energies of these excitons that change in interval 0.5-1.01 eV.
Original languageEnglish
Pages (from-to)25-34
Number of pages10
JournalPhysica status solidi. A : applications and materials science
Volume203
Issue number1
DOIs
Publication statusPublished - 2006

Keywords

  • basis sets
  • computational methodology
  • semiconductor compounds

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