Electron mobility in low temperature grown gallium arsenide

P. Arifin; E. M. Goldys; T. L. Tansley

doi:10.1016/0921-5107(95)01347-4

Electron mobility in low temperature grown gallium arsenide

P. Arifin^*, E. M. Goldys, T. L. Tansley

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We investigated theoretically the electron mobility in low temperature grown GaAs (LT GaAs), based on the 'internal Schottky barrier' model, utilizing a Monte Carlo method. We used a novel approach to overcome the problem of inhomogeneity of the internal electric field due to the presence of precipitates. The behaviour of mobility as a function of temperature in LT GaAs for precipitate concentrations in the range 10¹⁵-10¹⁷ cm^-3 is presented. This is the first result of mobility calculation in LT GaAs, based on the Monte Carlo method, reported to date. The dependence of mobility on the doping concentration is also presented.

Original language	English
Pages (from-to)	330-333
Number of pages	4
Journal	Materials Science and Engineering B
Volume	35
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-5107(95)01347-4
Publication status	Published - Dec 1995

Keywords

gallium arsenide
Monte Carlo models

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10.1016/0921-5107(95)01347-4

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title = "Electron mobility in low temperature grown gallium arsenide",

abstract = "We investigated theoretically the electron mobility in low temperature grown GaAs (LT GaAs), based on the 'internal Schottky barrier' model, utilizing a Monte Carlo method. We used a novel approach to overcome the problem of inhomogeneity of the internal electric field due to the presence of precipitates. The behaviour of mobility as a function of temperature in LT GaAs for precipitate concentrations in the range 1015-1017 cm-3 is presented. This is the first result of mobility calculation in LT GaAs, based on the Monte Carlo method, reported to date. The dependence of mobility on the doping concentration is also presented.",

keywords = "gallium arsenide, Monte Carlo models",

author = "P. Arifin and Goldys, {E. M.} and Tansley, {T. L.}",

year = "1995",

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language = "English",

volume = "35",

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journal = "Materials Science and Engineering B",

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TY - JOUR

T1 - Electron mobility in low temperature grown gallium arsenide

AU - Arifin, P.

AU - Goldys, E. M.

AU - Tansley, T. L.

PY - 1995/12

Y1 - 1995/12

N2 - We investigated theoretically the electron mobility in low temperature grown GaAs (LT GaAs), based on the 'internal Schottky barrier' model, utilizing a Monte Carlo method. We used a novel approach to overcome the problem of inhomogeneity of the internal electric field due to the presence of precipitates. The behaviour of mobility as a function of temperature in LT GaAs for precipitate concentrations in the range 1015-1017 cm-3 is presented. This is the first result of mobility calculation in LT GaAs, based on the Monte Carlo method, reported to date. The dependence of mobility on the doping concentration is also presented.

AB - We investigated theoretically the electron mobility in low temperature grown GaAs (LT GaAs), based on the 'internal Schottky barrier' model, utilizing a Monte Carlo method. We used a novel approach to overcome the problem of inhomogeneity of the internal electric field due to the presence of precipitates. The behaviour of mobility as a function of temperature in LT GaAs for precipitate concentrations in the range 1015-1017 cm-3 is presented. This is the first result of mobility calculation in LT GaAs, based on the Monte Carlo method, reported to date. The dependence of mobility on the doping concentration is also presented.

KW - gallium arsenide

KW - Monte Carlo models

UR - http://www.scopus.com/inward/record.url?scp=0029488691&partnerID=8YFLogxK

U2 - 10.1016/0921-5107(95)01347-4

DO - 10.1016/0921-5107(95)01347-4

M3 - Article

AN - SCOPUS:0029488691

SN - 0921-5107

VL - 35

SP - 330

EP - 333

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 1-3

ER -

Electron mobility in low temperature grown gallium arsenide

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Keywords

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