Electron paramagnetic resonance studies of silicon-related defects in diamond

A. M. Edmonds, M. E. Newton, P. M. Martineau, D. J. Twitchen, S. D. Williams

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Abstract

We report the results of multifrequency electron paramagnetic resonance studies at temperatures between 8 and 300 K on diamonds synthesized by chemical vapor deposition and intentionally silicon doped with isotopes in natural abundance or isotopically enriched. The S 29 i hyperfine structure has provided definitive evidence for the involvement of silicon in two electron paramagnetic resonance centers in diamond that were previously suspected to involve silicon: KUL1 and KUL3. We present data that unambiguously identify KUL1 as an S=1 neutral silicon split-vacancy (D3d symmetry) defect (V-Si-V) 0, while KUL3 is shown to be (V-Si-V) 0 decorated with a hydrogen atom, (V-Si-V:H) 0.

Original languageEnglish
Article number245205
JournalPhysical Review B: Condensed Matter and Materials Physics
Volume77
Issue number24
DOIs
Publication statusPublished - 11 Jun 2008

Bibliographical note

Erratum can be found in Physical Review B - Condensed Matter and Materials Physics, Volume 82(24), 249901, http://dx.doi.org/10.1103/PhysRevB.82.249901

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