Abstract
We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy (SiV-) centre in diamond. Optical transition linewidths, transition wavelength and excited state lifetimes are measured for the temperature range 4 K-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. Amicroscopic model of the thermal broadening in the excited and ground states of the SiV- centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures.Wediscuss the implications of our findings for coherence of qubits in the ground states and propose methods to extend coherence times of SiV- qubits.
Original language | English |
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Article number | 043011 |
Pages (from-to) | 1-11 |
Number of pages | 11 |
Journal | New Journal of Physics |
Volume | 17 |
DOIs | |
Publication status | Published - 8 Apr 2015 |
Externally published | Yes |
Bibliographical note
Copyright the Publisher 2015. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.Keywords
- colour center
- diamond
- optical transitions
- phonon
- relaxation time
- silicon vacancy
- temperature