Electron-phonon processes of the silicon-vacancy centre in diamond

Kay D. Jahnke, Alp Sipahigil, Jan M. Binder, Marcus W. Doherty, Mathias Metsch, Lachlan J. Rogers, Neil B. Manson, Mikhail D. Lukin, Fedor Jelezko

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211 Citations (Scopus)
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We investigate phonon induced electronic dynamics in the ground and excited states of the negatively charged silicon-vacancy (SiV-) centre in diamond. Optical transition linewidths, transition wavelength and excited state lifetimes are measured for the temperature range 4 K-350 K. The ground state orbital relaxation rates are measured using time-resolved fluorescence techniques. Amicroscopic model of the thermal broadening in the excited and ground states of the SiV- centre is developed. A vibronic process involving single-phonon transitions is found to determine orbital relaxation rates for both the ground and the excited states at cryogenic temperatures.Wediscuss the implications of our findings for coherence of qubits in the ground states and propose methods to extend coherence times of SiV- qubits.

Original languageEnglish
Article number043011
Pages (from-to)1-11
Number of pages11
JournalNew Journal of Physics
Publication statusPublished - 8 Apr 2015
Externally publishedYes

Bibliographical note

Copyright the Publisher 2015. Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.


  • colour center
  • diamond
  • optical transitions
  • phonon
  • relaxation time
  • silicon vacancy
  • temperature


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