Electron transport in low temperature grown in GaAs

P. Arifin; T. L. Tansley; E. M. Goldys

doi:10.1109/COMMAD.1996.610142

Electron transport in low temperature grown in GaAs

P. Arifin^*, T. L. Tansley, E. M. Goldys

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

MBE grown low temperature GaAs layers have been annealed at various temperatures up to 600 °C and their structural and transport properties examined. Excess As precipitation is confirmed by TEM measurements. Both hopping and band transport are present in the material annealed at temperatures up to 500 °C. The measured mobility for 600 °C annealed material agrees well with predictions of Monte Carlo calculations taking full account of precipitate scattering.

Original language	English
Title of host publication	1996 Conference on Optoelectronic and Microelectronic Materials and Devices proceedings
Place of Publication	Piscataway NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	349-352
Number of pages	4
ISBN (Print)	0780333748, 9780780333741
DOIs	https://doi.org/10.1109/COMMAD.1996.610142
Publication status	Published - 1996
Event	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust Duration: 8 Dec 1996 → 11 Dec 1996

Other

Other	Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
City	Canberra, Aust
Period	8/12/96 → 11/12/96

Access to Document

10.1109/COMMAD.1996.610142

Cite this

@inproceedings{55572639404f4c5dbf2ffb923b6d5582,

title = "Electron transport in low temperature grown in GaAs",

abstract = "MBE grown low temperature GaAs layers have been annealed at various temperatures up to 600 °C and their structural and transport properties examined. Excess As precipitation is confirmed by TEM measurements. Both hopping and band transport are present in the material annealed at temperatures up to 500 °C. The measured mobility for 600 °C annealed material agrees well with predictions of Monte Carlo calculations taking full account of precipitate scattering.",

author = "P. Arifin and Tansley, {T. L.} and Goldys, {E. M.}",

year = "1996",

doi = "10.1109/COMMAD.1996.610142",

language = "English",

isbn = "0780333748",

pages = "349--352",

booktitle = "1996 Conference on Optoelectronic and Microelectronic Materials and Devices proceedings",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD ; Conference date: 08-12-1996 Through 11-12-1996",

}

Arifin, P, Tansley, TL & Goldys, EM 1996, Electron transport in low temperature grown in GaAs. in 1996 Conference on Optoelectronic and Microelectronic Materials and Devices proceedings. Institute of Electrical and Electronics Engineers (IEEE), Piscataway NJ, pp. 349-352, Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD, Canberra, Aust, 8/12/96. https://doi.org/10.1109/COMMAD.1996.610142

Electron transport in low temperature grown in GaAs. / Arifin, P.; Tansley, T. L.; Goldys, E. M.
1996 Conference on Optoelectronic and Microelectronic Materials and Devices proceedings. Piscataway NJ: Institute of Electrical and Electronics Engineers (IEEE), 1996. p. 349-352.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Electron transport in low temperature grown in GaAs

AU - Arifin, P.

AU - Tansley, T. L.

AU - Goldys, E. M.

PY - 1996

Y1 - 1996

N2 - MBE grown low temperature GaAs layers have been annealed at various temperatures up to 600 °C and their structural and transport properties examined. Excess As precipitation is confirmed by TEM measurements. Both hopping and band transport are present in the material annealed at temperatures up to 500 °C. The measured mobility for 600 °C annealed material agrees well with predictions of Monte Carlo calculations taking full account of precipitate scattering.

AB - MBE grown low temperature GaAs layers have been annealed at various temperatures up to 600 °C and their structural and transport properties examined. Excess As precipitation is confirmed by TEM measurements. Both hopping and band transport are present in the material annealed at temperatures up to 500 °C. The measured mobility for 600 °C annealed material agrees well with predictions of Monte Carlo calculations taking full account of precipitate scattering.

UR - http://www.scopus.com/inward/record.url?scp=0030353161&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.1996.610142

DO - 10.1109/COMMAD.1996.610142

M3 - Conference proceeding contribution

AN - SCOPUS:0030353161

SN - 0780333748

SN - 9780780333741

SP - 349

EP - 352

BT - 1996 Conference on Optoelectronic and Microelectronic Materials and Devices proceedings

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway NJ

T2 - Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD

Y2 - 8 December 1996 through 11 December 1996

ER -

Electron transport in low temperature grown in GaAs

Abstract

Other

Access to Document

Other files and links

Fingerprint

Cite this