Electron transport in low temperature grown in GaAs

P. Arifin*, T. L. Tansley, E. M. Goldys

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

MBE grown low temperature GaAs layers have been annealed at various temperatures up to 600 °C and their structural and transport properties examined. Excess As precipitation is confirmed by TEM measurements. Both hopping and band transport are present in the material annealed at temperatures up to 500 °C. The measured mobility for 600 °C annealed material agrees well with predictions of Monte Carlo calculations taking full account of precipitate scattering.

Original languageEnglish
Title of host publication1996 Conference on Optoelectronic and Microelectronic Materials and Devices proceedings
Place of PublicationPiscataway NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages349-352
Number of pages4
ISBN (Print)0780333748, 9780780333741
DOIs
Publication statusPublished - 1996
EventProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust
Duration: 8 Dec 199611 Dec 1996

Other

OtherProceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD
CityCanberra, Aust
Period8/12/9611/12/96

Fingerprint Dive into the research topics of 'Electron transport in low temperature grown in GaAs'. Together they form a unique fingerprint.

Cite this