Electron trapping in quantum-well structures

Judith M. Dawes*, Mark G. Sceats

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The trapping of electrons by charged impurities or holes in quantum wells and bulk semiconductors is investigated using a theory of encounter dynamics which can be applied for the arbitrary mean free path of the carriers. The theory reduces the dimensionality d of the encounter problem from two dimensions (quantum wells) or three dimensions (bulk semiconductors) to a one-dimensional problem of passage over a barrier in the effective potential V(R)-(d-1)kT lnR, where V(R) is the screened Coulomb potential. The results show that the effect of the reduced configuration space available in two dimensions is a lower encounter rate.

Original languageEnglish
Pages (from-to)9604-9611
Number of pages8
JournalPhysical Review B
Volume36
Issue number18
DOIs
Publication statusPublished - 1987
Externally publishedYes

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