Electronic band structure information of GdN extracted from x-ray absorption and emission spectroscopy

A. R H Preston, B. J. Ruck, W. R L Lambrecht, L. F J Piper, J. E. Downes, K. E. Smith, H. J. Trodahl

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Abstract

The electronic structure of GdN films grown by pulsed laser deposition has been investigated by soft x-ray absorption (XAS) and x-ray emission spectroscopy (XES) at the N K-edge. Density functional calculations within the local spin density approximation with Hubbard- U corrections of the N p weighted bands and density of states are used to extract band information from the spectra. Gd M4,5 XAS and XES spectra are also presented. The XES-XAS separation is shown to give information on the f -band spin splitting and the XAS line shapes are shown to reflect atomic multiplet effects.

Original languageEnglish
Article number032101
Pages (from-to)032101-1-032101-3
Number of pages3
JournalApplied Physics Letters
Volume96
Issue number3
DOIs
Publication statusPublished - 2010

Bibliographical note

Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied physics letters, 96(3), 032101, and may be found at http://apl.aip.org/applab/v96/i3/p032101_s1

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