Electronic band structure information of GdN extracted from x-ray absorption and emission spectroscopy

A. R H Preston; B. J. Ruck; W. R L Lambrecht; L. F J Piper; J. E. Downes; K. E. Smith; H. J. Trodahl

doi:10.1063/1.3291057

Electronic band structure information of GdN extracted from x-ray absorption and emission spectroscopy

A. R H Preston, B. J. Ruck, W. R L Lambrecht, L. F J Piper, J. E. Downes, K. E. Smith, H. J. Trodahl

MQ Photonics Research Centre

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Abstract

The electronic structure of GdN films grown by pulsed laser deposition has been investigated by soft x-ray absorption (XAS) and x-ray emission spectroscopy (XES) at the N K-edge. Density functional calculations within the local spin density approximation with Hubbard- U corrections of the N p weighted bands and density of states are used to extract band information from the spectra. Gd M4,5 XAS and XES spectra are also presented. The XES-XAS separation is shown to give information on the f -band spin splitting and the XAS line shapes are shown to reflect atomic multiplet effects.

Original language	English
Article number	032101
Pages (from-to)	032101-1-032101-3
Number of pages	3
Journal	Applied Physics Letters
Volume	96
Issue number	3
DOIs	https://doi.org/10.1063/1.3291057
Publication status	Published - 2010

Bibliographical note

Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied physics letters, 96(3), 032101, and may be found at http://apl.aip.org/applab/v96/i3/p032101_s1

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title = "Electronic band structure information of GdN extracted from x-ray absorption and emission spectroscopy",

abstract = "The electronic structure of GdN films grown by pulsed laser deposition has been investigated by soft x-ray absorption (XAS) and x-ray emission spectroscopy (XES) at the N K-edge. Density functional calculations within the local spin density approximation with Hubbard- U corrections of the N p weighted bands and density of states are used to extract band information from the spectra. Gd M4,5 XAS and XES spectra are also presented. The XES-XAS separation is shown to give information on the f -band spin splitting and the XAS line shapes are shown to reflect atomic multiplet effects.",

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AU - Preston, A. R H

AU - Ruck, B. J.

AU - Lambrecht, W. R L

AU - Piper, L. F J

AU - Downes, J. E.

AU - Smith, K. E.

AU - Trodahl, H. J.

N1 - Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied physics letters, 96(3), 032101, and may be found at http://apl.aip.org/applab/v96/i3/p032101_s1

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AB - The electronic structure of GdN films grown by pulsed laser deposition has been investigated by soft x-ray absorption (XAS) and x-ray emission spectroscopy (XES) at the N K-edge. Density functional calculations within the local spin density approximation with Hubbard- U corrections of the N p weighted bands and density of states are used to extract band information from the spectra. Gd M4,5 XAS and XES spectra are also presented. The XES-XAS separation is shown to give information on the f -band spin splitting and the XAS line shapes are shown to reflect atomic multiplet effects.

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Electronic band structure information of GdN extracted from x-ray absorption and emission spectroscopy

Abstract

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