Electronic properties of (Ga,Mn)N thin films with high Mn content

S. Granville*, B. J. Ruck, A. R H Preston, T. Stewart, F. Budde, H. J. Trodahl, A. Bittar, J. E. Downes, M. Ridgway

*Corresponding author for this work

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Abstract

Optical and dc resistivity measurements as well as x-ray spectroscopies have been performed on (Ga,Mn)N films containing Mn at up to 11 at. %. The results indicate that at higher Mn contents, the Fermi level is situated within extended states, while GaN host interband optical transitions are unaffected. The Mn state is confirmed to be 3 d5, as in the case of lower Mn content films; however, the high Mn content merges the 3d levels into a band located just below the host conduction band. The Fermi level is located within these Mn states just below the conduction band, in sharp contrast to its midgap position in fully crystalline, low Mn concentration materials. The difference in the position of the Fermi level at high Mn dopant levels has important implications for the promotion of ferromagnetism in this material.

Original languageEnglish
Article number103710
Pages (from-to)1-5
Number of pages5
JournalJournal of Applied Physics
Volume104
Issue number10
DOIs
Publication statusPublished - 2008

Bibliographical note

Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of applied physics, vol 104, Issue 10, pp 103710-1 - 103710-5, and may be found at http://link.aip.org/link/?JAPIAU/104/103710/1.

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    Granville, S., Ruck, B. J., Preston, A. R. H., Stewart, T., Budde, F., Trodahl, H. J., ... Ridgway, M. (2008). Electronic properties of (Ga,Mn)N thin films with high Mn content. Journal of Applied Physics, 104(10), 1-5. [103710]. https://doi.org/10.1063/1.3020536