Electronic properties of (Ga,Mn)N thin films with high Mn content

S. Granville; B. J. Ruck; A. R H Preston; T. Stewart; F. Budde; H. J. Trodahl; A. Bittar; J. E. Downes; M. Ridgway

doi:10.1063/1.3020536

Electronic properties of (Ga,Mn)N thin films with high Mn content

S. Granville^*, B. J. Ruck, A. R H Preston, T. Stewart, F. Budde, H. J. Trodahl, A. Bittar, J. E. Downes, M. Ridgway

^*Corresponding author for this work

MQ Photonics Research Centre

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

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Abstract

Optical and dc resistivity measurements as well as x-ray spectroscopies have been performed on (Ga,Mn)N films containing Mn at up to 11 at. %. The results indicate that at higher Mn contents, the Fermi level is situated within extended states, while GaN host interband optical transitions are unaffected. The Mn state is confirmed to be 3 d5, as in the case of lower Mn content films; however, the high Mn content merges the 3d levels into a band located just below the host conduction band. The Fermi level is located within these Mn states just below the conduction band, in sharp contrast to its midgap position in fully crystalline, low Mn concentration materials. The difference in the position of the Fermi level at high Mn dopant levels has important implications for the promotion of ferromagnetism in this material.

Original language	English
Article number	103710
Pages (from-to)	1-5
Number of pages	5
Journal	Journal of Applied Physics
Volume	104
Issue number	10
DOIs	https://doi.org/10.1063/1.3020536
Publication status	Published - 2008

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Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of applied physics, vol 104, Issue 10, pp 103710-1 - 103710-5, and may be found at http://link.aip.org/link/?JAPIAU/104/103710/1.

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title = "Electronic properties of (Ga,Mn)N thin films with high Mn content",

abstract = "Optical and dc resistivity measurements as well as x-ray spectroscopies have been performed on (Ga,Mn)N films containing Mn at up to 11 at. \%. The results indicate that at higher Mn contents, the Fermi level is situated within extended states, while GaN host interband optical transitions are unaffected. The Mn state is confirmed to be 3 d5, as in the case of lower Mn content films; however, the high Mn content merges the 3d levels into a band located just below the host conduction band. The Fermi level is located within these Mn states just below the conduction band, in sharp contrast to its midgap position in fully crystalline, low Mn concentration materials. The difference in the position of the Fermi level at high Mn dopant levels has important implications for the promotion of ferromagnetism in this material.",

author = "S. Granville and Ruck, \{B. J.\} and Preston, \{A. R H\} and T. Stewart and F. Budde and Trodahl, \{H. J.\} and A. Bittar and Downes, \{J. E.\} and M. Ridgway",

note = "Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of applied physics, vol 104, Issue 10, pp 103710-1 - 103710-5, and may be found at http://link.aip.org/link/?JAPIAU/104/103710/1.",

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T1 - Electronic properties of (Ga,Mn)N thin films with high Mn content

AU - Granville, S.

AU - Ruck, B. J.

AU - Preston, A. R H

AU - Stewart, T.

AU - Budde, F.

AU - Trodahl, H. J.

AU - Bittar, A.

AU - Downes, J. E.

AU - Ridgway, M.

N1 - Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of applied physics, vol 104, Issue 10, pp 103710-1 - 103710-5, and may be found at http://link.aip.org/link/?JAPIAU/104/103710/1.

PY - 2008

Y1 - 2008

N2 - Optical and dc resistivity measurements as well as x-ray spectroscopies have been performed on (Ga,Mn)N films containing Mn at up to 11 at. %. The results indicate that at higher Mn contents, the Fermi level is situated within extended states, while GaN host interband optical transitions are unaffected. The Mn state is confirmed to be 3 d5, as in the case of lower Mn content films; however, the high Mn content merges the 3d levels into a band located just below the host conduction band. The Fermi level is located within these Mn states just below the conduction band, in sharp contrast to its midgap position in fully crystalline, low Mn concentration materials. The difference in the position of the Fermi level at high Mn dopant levels has important implications for the promotion of ferromagnetism in this material.

AB - Optical and dc resistivity measurements as well as x-ray spectroscopies have been performed on (Ga,Mn)N films containing Mn at up to 11 at. %. The results indicate that at higher Mn contents, the Fermi level is situated within extended states, while GaN host interband optical transitions are unaffected. The Mn state is confirmed to be 3 d5, as in the case of lower Mn content films; however, the high Mn content merges the 3d levels into a band located just below the host conduction band. The Fermi level is located within these Mn states just below the conduction band, in sharp contrast to its midgap position in fully crystalline, low Mn concentration materials. The difference in the position of the Fermi level at high Mn dopant levels has important implications for the promotion of ferromagnetism in this material.

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U2 - 10.1063/1.3020536

DO - 10.1063/1.3020536

M3 - Article

AN - SCOPUS:57049128197

SN - 0021-8979

VL - 104

SP - 1

EP - 5

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10

M1 - 103710

ER -

Electronic properties of (Ga,Mn)N thin films with high Mn content

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