Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO2

Sebastian Gutsch, Jan Laube, Daniel Hiller, Wolfgang Bock, Michael Wahl, Michael Kopnarski, Hubert Gnaser, Binesh Puthen-Veettil, Margit Zacharias

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)


We study the electronic properties of phosphorus doped Si nanocrystal/SiO2 superlattices and determine the carrier concentration by transient current analysis. This is achieved by encapsulating the multilayers between two electrical insulation layers and controlling the carrier mobility by a defined layer to layer separation. A saturation of the voltage dependent ionized carrier density is observed which indicates complete substitutional dopant ionization and allows to calculate the dopant induced charge carrier density. It is found that the doping efficiency of the superlattice is only 0.12% considering the full ionization regime which explains the unusual small dopant effect on transport characteristics.

Original languageEnglish
Article number113103
Number of pages4
JournalApplied Physics Letters
Issue number11
Publication statusPublished - 16 Mar 2015
Externally publishedYes


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