Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO2

Sebastian Gutsch; Jan Laube; Daniel Hiller; Wolfgang Bock; Michael Wahl; Michael Kopnarski; Hubert Gnaser; Binesh Puthen-Veettil; Margit Zacharias

doi:10.1063/1.4915307

Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO₂

Sebastian Gutsch, Jan Laube, Daniel Hiller, Wolfgang Bock, Michael Wahl, Michael Kopnarski, Hubert Gnaser, Binesh Puthen-Veettil, Margit Zacharias

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We study the electronic properties of phosphorus doped Si nanocrystal/SiO2 superlattices and determine the carrier concentration by transient current analysis. This is achieved by encapsulating the multilayers between two electrical insulation layers and controlling the carrier mobility by a defined layer to layer separation. A saturation of the voltage dependent ionized carrier density is observed which indicates complete substitutional dopant ionization and allows to calculate the dopant induced charge carrier density. It is found that the doping efficiency of the superlattice is only 0.12% considering the full ionization regime which explains the unusual small dopant effect on transport characteristics.

Original language	English
Article number	113103
Number of pages	4
Journal	Applied Physics Letters
Volume	106
Issue number	11
DOIs	https://doi.org/10.1063/1.4915307
Publication status	Published - 16 Mar 2015
Externally published	Yes

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10.1063/1.4915307

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AU - Gutsch, Sebastian

AU - Laube, Jan

AU - Hiller, Daniel

AU - Bock, Wolfgang

AU - Wahl, Michael

AU - Kopnarski, Michael

AU - Gnaser, Hubert

AU - Puthen-Veettil, Binesh

AU - Zacharias, Margit

PY - 2015/3/16

Y1 - 2015/3/16

N2 - We study the electronic properties of phosphorus doped Si nanocrystal/SiO2 superlattices and determine the carrier concentration by transient current analysis. This is achieved by encapsulating the multilayers between two electrical insulation layers and controlling the carrier mobility by a defined layer to layer separation. A saturation of the voltage dependent ionized carrier density is observed which indicates complete substitutional dopant ionization and allows to calculate the dopant induced charge carrier density. It is found that the doping efficiency of the superlattice is only 0.12% considering the full ionization regime which explains the unusual small dopant effect on transport characteristics.

AB - We study the electronic properties of phosphorus doped Si nanocrystal/SiO2 superlattices and determine the carrier concentration by transient current analysis. This is achieved by encapsulating the multilayers between two electrical insulation layers and controlling the carrier mobility by a defined layer to layer separation. A saturation of the voltage dependent ionized carrier density is observed which indicates complete substitutional dopant ionization and allows to calculate the dopant induced charge carrier density. It is found that the doping efficiency of the superlattice is only 0.12% considering the full ionization regime which explains the unusual small dopant effect on transport characteristics.

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Electronic properties of phosphorus doped silicon nanocrystals embedded in SiO₂

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