Electronic structure of the negatively charged silicon-vacancy center in diamond

Lachlan J. Rogers*, Kay D. Jahnke, Marcus W. Doherty, Andreas Dietrich, Liam P. McGuinness, Christoph Müller, Tokuyuki Teraji, Hitoshi Sumiya, Junichi Isoya, Neil B. Manson, Fedor Jelezko

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

159 Citations (Scopus)
38 Downloads (Pure)


The negatively charged silicon-vacancy (SiVâ) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a âŒ

Original languageEnglish
Article number235101
Pages (from-to)1-8
Number of pages8
JournalPhysical Review B: Condensed Matter and Materials Physics
Issue number23
Publication statusPublished - 2 Jun 2014
Externally publishedYes

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