Electronic structure of the negatively charged silicon-vacancy center in diamond

Lachlan J. Rogers; Kay D. Jahnke; Marcus W. Doherty; Andreas Dietrich; Liam P. McGuinness; Christoph Müller; Tokuyuki Teraji; Hitoshi Sumiya; Junichi Isoya; Neil B. Manson; Fedor Jelezko

doi:10.1103/PhysRevB.89.235101

Electronic structure of the negatively charged silicon-vacancy center in diamond

Lachlan J. Rogers^*, Kay D. Jahnke, Marcus W. Doherty, Andreas Dietrich, Liam P. McGuinness, Christoph Müller, Tokuyuki Teraji, Hitoshi Sumiya, Junichi Isoya, Neil B. Manson, Fedor Jelezko

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

198 Citations (Scopus)

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Abstract

The negatively charged silicon-vacancy (SiVâ) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a âŒ

Original language	English
Article number	235101
Pages (from-to)	1-8
Number of pages	8
Journal	Physical Review B: Condensed Matter and Materials Physics
Volume	89
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.89.235101
Publication status	Published - 2 Jun 2014
Externally published	Yes

Bibliographical note

Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

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Rogers, L. J., Jahnke, K. D., Doherty, M. W., Dietrich, A., McGuinness, L. P., Müller, C., Teraji, T., Sumiya, H., Isoya, J., Manson, N. B., & Jelezko, F. (2014). Electronic structure of the negatively charged silicon-vacancy center in diamond. Physical Review B: Condensed Matter and Materials Physics, 89(23), 1-8. Article 235101. https://doi.org/10.1103/PhysRevB.89.235101

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title = "Electronic structure of the negatively charged silicon-vacancy center in diamond",

abstract = "The negatively charged silicon-vacancy (SiV{\^a}) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a {\^a}{\OE}",

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doi = "10.1103/PhysRevB.89.235101",

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T1 - Electronic structure of the negatively charged silicon-vacancy center in diamond

AU - Rogers, Lachlan J.

AU - Jahnke, Kay D.

AU - Doherty, Marcus W.

AU - Dietrich, Andreas

AU - McGuinness, Liam P.

AU - Müller, Christoph

AU - Teraji, Tokuyuki

AU - Sumiya, Hitoshi

AU - Isoya, Junichi

AU - Manson, Neil B.

AU - Jelezko, Fedor

N1 - Version archived for private and non-commercial use with the permission of the author/s and according to publisher conditions. For further rights please contact the publisher.

PY - 2014/6/2

Y1 - 2014/6/2

N2 - The negatively charged silicon-vacancy (SiVâ) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a âŒ

AB - The negatively charged silicon-vacancy (SiVâ) center in diamond is a promising single-photon source for quantum communications and information processing. However, the center's implementation in such quantum technologies is hindered by contention surrounding its fundamental properties. Here we present optical polarization measurements of single centers in bulk diamond that resolve this state of contention and establish that the center has a âŒ

UR - https://www.scopus.com/pages/publications/84902210801

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DO - 10.1103/PhysRevB.89.235101

M3 - Article

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JF - Physical Review B: Condensed Matter and Materials Physics

IS - 23

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ER -

Electronic structure of the negatively charged silicon-vacancy center in diamond

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