Electronic structure of thin film silicon oxynitrides measured using soft x-ray emission and absorption

Cormac McGuinness, Dongfeng Fu, James E. Downes, Kevin E. Smith*, Gregory Hughes, Jason Roche

*Corresponding author for this work

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The electronic structure of thin film silicon oxynitrides was measured by using soft x-ray emission and absorption. Soft x-ray emission and soft x-ray absorption were used to measure the valence and conduction band partial density of states in the interfacial region of both the nitrogen and oxygen states. It was shown that the elementally specific band gap for the N2p states in the interfacial region was measured to be 5 eV.

Original languageEnglish
Pages (from-to)3919-3922
Number of pages4
JournalJournal of Applied Physics
Volume94
Issue number6
DOIs
Publication statusPublished - 15 Sep 2003
Externally publishedYes

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