Abstract
The electronic structure of thin film silicon oxynitrides was measured by using soft x-ray emission and absorption. Soft x-ray emission and soft x-ray absorption were used to measure the valence and conduction band partial density of states in the interfacial region of both the nitrogen and oxygen states. It was shown that the elementally specific band gap for the N2p states in the interfacial region was measured to be 5 eV.
Original language | English |
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Pages (from-to) | 3919-3922 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 6 |
DOIs | |
Publication status | Published - 15 Sept 2003 |
Externally published | Yes |