Electrostriction in gallium nitride

I. L. Guy, S. Muensit, E. M. Goldys

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    34 Citations (Scopus)

    Abstract

    Electromechanical effects in the compound semiconductor gallium nitride have been measured. The electromechanical response is found to include a significant contribution from electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN is (1.2 ±0.1)X10-18 m2V-2. This finding may have significance for devices using strained layers of this material.

    Original languageEnglish
    Pages (from-to)3641-3643
    Number of pages3
    JournalApplied Physics Letters
    Volume75
    Issue number23
    Publication statusPublished - 6 Dec 1999

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