Electromechanical effects in the compound semiconductor gallium nitride have been measured. The electromechanical response is found to include a significant contribution from electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN is (1.2 ±0.1)X10-18 m2V-2. This finding may have significance for devices using strained layers of this material.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 6 Dec 1999|