Electrostriction in gallium nitride

I. L. Guy, S. Muensit, E. M. Goldys

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Electromechanical effects in the compound semiconductor gallium nitride have been measured. The electromechanical response is found to include a significant contribution from electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN is (1.2 ±0.1)X10-18 m2V-2. This finding may have significance for devices using strained layers of this material.

Original languageEnglish
Pages (from-to)3641-3643
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number23
Publication statusPublished - 6 Dec 1999

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