Abstract
Electromechanical effects in the compound semiconductor gallium nitride have been measured. The electromechanical response is found to include a significant contribution from electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN is (1.2 ±0.1)X10-18 m2V-2. This finding may have significance for devices using strained layers of this material.
| Original language | English |
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| Pages (from-to) | 3641-3643 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 75 |
| Issue number | 23 |
| Publication status | Published - 6 Dec 1999 |