Electrostriction in gallium nitride

I. L. Guy; S. Muensit; E. M. Goldys

Electrostriction in gallium nitride

I. L. Guy, S. Muensit, E. M. Goldys

Research output: Contribution to journal › Article › peer-review

Abstract

Electromechanical effects in the compound semiconductor gallium nitride have been measured. The electromechanical response is found to include a significant contribution from electrostriction. The measured value of the electrostrictive coefficient M₃₃ in a polycrystalline sample of GaN is (1.2 ±0.1)X10^-18 m²V^-2. This finding may have significance for devices using strained layers of this material.

Original language	English
Pages (from-to)	3641-3643
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	23
Publication status	Published - 6 Dec 1999

Cite this

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title = "Electrostriction in gallium nitride",

abstract = "Electromechanical effects in the compound semiconductor gallium nitride have been measured. The electromechanical response is found to include a significant contribution from electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN is (1.2 ±0.1)X10-18 m2V-2. This finding may have significance for devices using strained layers of this material.",

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AU - Guy, I. L.

AU - Muensit, S.

AU - Goldys, E. M.

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N2 - Electromechanical effects in the compound semiconductor gallium nitride have been measured. The electromechanical response is found to include a significant contribution from electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN is (1.2 ±0.1)X10-18 m2V-2. This finding may have significance for devices using strained layers of this material.

AB - Electromechanical effects in the compound semiconductor gallium nitride have been measured. The electromechanical response is found to include a significant contribution from electrostriction. The measured value of the electrostrictive coefficient M33 in a polycrystalline sample of GaN is (1.2 ±0.1)X10-18 m2V-2. This finding may have significance for devices using strained layers of this material.

UR - https://www.scopus.com/pages/publications/0001023394

M3 - Article

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SN - 0003-6951

VL - 75

SP - 3641

EP - 3643

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

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Electrostriction in gallium nitride

Abstract

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