Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers

Anthony E. Parker, James G. Rathmell

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

7 Citations (Scopus)
1 Downloads (Pure)

Abstract

A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power dc measurements can be used to characterize breakdown and that the model correctly extrapolates to regions outside the safe-operating-area. When included in a large-signal FET model with dynamic calculation of junction temperature, the output power, power-added efficiency (PAE) and peak PAE of a common-source amplifier are well predicted.

Original languageEnglish
Title of host publicationInternational Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S
Place of PublicationPistacaway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages881-884
Number of pages4
ISBN (Electronic)9781424428045
ISBN (Print)9781424428038
DOIs
Publication statusPublished - 2009
Event2009 IEEE MTT-S International Microwave Symposium, IMS - 2009 - Boston, United States
Duration: 7 Jun 200912 Jun 2009

Other

Other2009 IEEE MTT-S International Microwave Symposium, IMS - 2009
CountryUnited States
CityBoston
Period7/06/0912/06/09

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