Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers

Anthony E. Parker; James G. Rathmell

doi:10.1109/MWSYM.2009.5165838

Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers

Anthony E. Parker, James G. Rathmell

Department of Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

7 Citations (Scopus)

2 Downloads (Pure)

Abstract

A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power dc measurements can be used to characterize breakdown and that the model correctly extrapolates to regions outside the safe-operating-area. When included in a large-signal FET model with dynamic calculation of junction temperature, the output power, power-added efficiency (PAE) and peak PAE of a common-source amplifier are well predicted.

Original language	English
Title of host publication	International Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S
Place of Publication	Pistacaway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	881-884
Number of pages	4
ISBN (Electronic)	9781424428045
ISBN (Print)	9781424428038
DOIs	https://doi.org/10.1109/MWSYM.2009.5165838
Publication status	Published - 2009
Event	2009 IEEE MTT-S International Microwave Symposium, IMS - 2009 - Boston, United States Duration: 7 Jun 2009 → 12 Jun 2009

Other

Other	2009 IEEE MTT-S International Microwave Symposium, IMS - 2009
Country	United States
City	Boston
Period	7/06/09 → 12/06/09

Access to Document

10.1109/MWSYM.2009.5165838

Publisher version (open access).pdfFinal published version, 236 KB

Link to publication in Scopus

Fingerprint Dive into the research topics of 'Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers'. Together they form a unique fingerprint.

Cite this

@inproceedings{e2f44a19476d47b08aee9cef22da7ac7,

title = "Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers",

abstract = "A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power dc measurements can be used to characterize breakdown and that the model correctly extrapolates to regions outside the safe-operating-area. When included in a large-signal FET model with dynamic calculation of junction temperature, the output power, power-added efficiency (PAE) and peak PAE of a common-source amplifier are well predicted.",

author = "Parker, {Anthony E.} and Rathmell, {James G.}",

year = "2009",

doi = "10.1109/MWSYM.2009.5165838",

language = "English",

isbn = "9781424428038",

pages = "881--884",

booktitle = "International Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2009 IEEE MTT-S International Microwave Symposium, IMS - 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Parker, AE & Rathmell, JG 2009, Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers. in International Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S., 5165838, Institute of Electrical and Electronics Engineers (IEEE), Pistacaway, NJ, pp. 881-884, 2009 IEEE MTT-S International Microwave Symposium, IMS - 2009, Boston, United States, 7/06/09. https://doi.org/10.1109/MWSYM.2009.5165838

Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers. / Parker, Anthony E.; Rathmell, James G.

International Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S. Pistacaway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2009. p. 881-884 5165838.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers

AU - Parker, Anthony E.

AU - Rathmell, James G.

PY - 2009

Y1 - 2009

N2 - A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power dc measurements can be used to characterize breakdown and that the model correctly extrapolates to regions outside the safe-operating-area. When included in a large-signal FET model with dynamic calculation of junction temperature, the output power, power-added efficiency (PAE) and peak PAE of a common-source amplifier are well predicted.

AB - A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power dc measurements can be used to characterize breakdown and that the model correctly extrapolates to regions outside the safe-operating-area. When included in a large-signal FET model with dynamic calculation of junction temperature, the output power, power-added efficiency (PAE) and peak PAE of a common-source amplifier are well predicted.

UR - http://www.scopus.com/inward/record.url?scp=77949926992&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2009.5165838

DO - 10.1109/MWSYM.2009.5165838

M3 - Conference proceeding contribution

AN - SCOPUS:77949926992

SN - 9781424428038

SP - 881

EP - 884

BT - International Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Pistacaway, NJ

T2 - 2009 IEEE MTT-S International Microwave Symposium, IMS - 2009

Y2 - 7 June 2009 through 12 June 2009

ER -