Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers

Anthony E. Parker; James G. Rathmell

doi:10.1109/MWSYM.2009.5165838

Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers

Anthony E. Parker, James G. Rathmell

Department of Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

7 Citations (Scopus)

1 Downloads (Pure)

Abstract

A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power dc measurements can be used to characterize breakdown and that the model correctly extrapolates to regions outside the safe-operating-area. When included in a large-signal FET model with dynamic calculation of junction temperature, the output power, power-added efficiency (PAE) and peak PAE of a common-source amplifier are well predicted.

Original language	English
Title of host publication	International Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S
Place of Publication	Pistacaway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	881-884
Number of pages	4
ISBN (Electronic)	9781424428045
ISBN (Print)	9781424428038
DOIs	https://doi.org/10.1109/MWSYM.2009.5165838
Publication status	Published - 2009
Event	2009 IEEE MTT-S International Microwave Symposium, IMS - 2009 - Boston, United States Duration: 7 Jun 2009 → 12 Jun 2009

Other

Other	2009 IEEE MTT-S International Microwave Symposium, IMS - 2009
Country	United States
City	Boston
Period	7/06/09 → 12/06/09

Access to Document

10.1109/MWSYM.2009.5165838

Publisher version (open access).pdfFinal published version, 236 KB

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Cite this

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title = "Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers",

abstract = "A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power dc measurements can be used to characterize breakdown and that the model correctly extrapolates to regions outside the safe-operating-area. When included in a large-signal FET model with dynamic calculation of junction temperature, the output power, power-added efficiency (PAE) and peak PAE of a common-source amplifier are well predicted.",

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Parker, AE & Rathmell, JG 2009, Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers. in International Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S., 5165838, Institute of Electrical and Electronics Engineers (IEEE), Pistacaway, NJ, pp. 881-884, 2009 IEEE MTT-S International Microwave Symposium, IMS - 2009, Boston, United States, 7/06/09. https://doi.org/10.1109/MWSYM.2009.5165838

Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers. / Parker, Anthony E.; Rathmell, James G.

International Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S. Pistacaway, NJ : Institute of Electrical and Electronics Engineers (IEEE), 2009. p. 881-884 5165838.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution

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