Abstract
A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power dc measurements can be used to characterize breakdown and that the model correctly extrapolates to regions outside the safe-operating-area. When included in a large-signal FET model with dynamic calculation of junction temperature, the output power, power-added efficiency (PAE) and peak PAE of a common-source amplifier are well predicted.
Original language | English |
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Title of host publication | International Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S |
Place of Publication | Pistacaway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 881-884 |
Number of pages | 4 |
ISBN (Electronic) | 9781424428045 |
ISBN (Print) | 9781424428038 |
DOIs | |
Publication status | Published - 2009 |
Event | 2009 IEEE MTT-S International Microwave Symposium, IMS - 2009 - Boston, United States Duration: 7 Jun 2009 → 12 Jun 2009 |
Other
Other | 2009 IEEE MTT-S International Microwave Symposium, IMS - 2009 |
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Country/Territory | United States |
City | Boston |
Period | 7/06/09 → 12/06/09 |