Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers

Anthony E. Parker, James G. Rathmell

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    7 Citations (Scopus)
    2 Downloads (Pure)

    Abstract

    A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power dc measurements can be used to characterize breakdown and that the model correctly extrapolates to regions outside the safe-operating-area. When included in a large-signal FET model with dynamic calculation of junction temperature, the output power, power-added efficiency (PAE) and peak PAE of a common-source amplifier are well predicted.

    Original languageEnglish
    Title of host publicationInternational Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S
    Place of PublicationPistacaway, NJ
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages881-884
    Number of pages4
    ISBN (Electronic)9781424428045
    ISBN (Print)9781424428038
    DOIs
    Publication statusPublished - 2009
    Event2009 IEEE MTT-S International Microwave Symposium, IMS - 2009 - Boston, United States
    Duration: 7 Jun 200912 Jun 2009

    Other

    Other2009 IEEE MTT-S International Microwave Symposium, IMS - 2009
    Country/TerritoryUnited States
    CityBoston
    Period7/06/0912/06/09

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