Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers

Anthony E. Parker; James G. Rathmell

doi:10.1109/MWSYM.2009.5165838

Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers

Anthony E. Parker, James G. Rathmell

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

7 Citations (Scopus)

32 Downloads (Pure)

Abstract

A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power dc measurements can be used to characterize breakdown and that the model correctly extrapolates to regions outside the safe-operating-area. When included in a large-signal FET model with dynamic calculation of junction temperature, the output power, power-added efficiency (PAE) and peak PAE of a common-source amplifier are well predicted.

Original language	English
Title of host publication	International Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S
Place of Publication	Pistacaway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	881-884
Number of pages	4
ISBN (Electronic)	9781424428045
ISBN (Print)	9781424428038
DOIs	https://doi.org/10.1109/MWSYM.2009.5165838
Publication status	Published - 2009
Event	2009 IEEE MTT-S International Microwave Symposium, IMS - 2009 - Boston, United States Duration: 7 Jun 2009 → 12 Jun 2009

Other

Other	2009 IEEE MTT-S International Microwave Symposium, IMS - 2009
Country/Territory	United States
City	Boston
Period	7/06/09 → 12/06/09

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10.1109/MWSYM.2009.5165838

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title = "Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers",

abstract = "A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power dc measurements can be used to characterize breakdown and that the model correctly extrapolates to regions outside the safe-operating-area. When included in a large-signal FET model with dynamic calculation of junction temperature, the output power, power-added efficiency (PAE) and peak PAE of a common-source amplifier are well predicted.",

author = "Parker, \{Anthony E.\} and Rathmell, \{James G.\}",

year = "2009",

doi = "10.1109/MWSYM.2009.5165838",

language = "English",

isbn = "9781424428038",

pages = "881--884",

booktitle = "International Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2009 IEEE MTT-S International Microwave Symposium, IMS - 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Parker, AE & Rathmell, JG 2009, Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers. in International Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S., 5165838, Institute of Electrical and Electronics Engineers (IEEE), Pistacaway, NJ, pp. 881-884, 2009 IEEE MTT-S International Microwave Symposium, IMS - 2009, Boston, Massachusetts, United States, 7/06/09. https://doi.org/10.1109/MWSYM.2009.5165838

Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers. / Parker, Anthony E.; Rathmell, James G.
International Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S. Pistacaway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2009. p. 881-884 5165838.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Parker, Anthony E.

AU - Rathmell, James G.

PY - 2009

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N2 - A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power dc measurements can be used to characterize breakdown and that the model correctly extrapolates to regions outside the safe-operating-area. When included in a large-signal FET model with dynamic calculation of junction temperature, the output power, power-added efficiency (PAE) and peak PAE of a common-source amplifier are well predicted.

AB - A model of gate-junction leakage and impact ionization is used to predict catastrophic junction- and avalanche-breakdown mechanisms in a FET. It is shown that low-power dc measurements can be used to characterize breakdown and that the model correctly extrapolates to regions outside the safe-operating-area. When included in a large-signal FET model with dynamic calculation of junction temperature, the output power, power-added efficiency (PAE) and peak PAE of a common-source amplifier are well predicted.

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M3 - Conference proceeding contribution

AN - SCOPUS:77949926992

SN - 9781424428038

SP - 881

EP - 884

BT - International Microwave Symposium Digest, IMS 2009 - 2009 IEEE MTT-S

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Pistacaway, NJ

T2 - 2009 IEEE MTT-S International Microwave Symposium, IMS - 2009

Y2 - 7 June 2009 through 12 June 2009

ER -

Electrothermal gate and channel breakdown model for prediction of power and efficiency in FET amplifiers

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