Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates

E. Valcheva*, T. Paskova, M. V. Abrashev, P. P. Paskov, P. O Å Persson, E. M. Goldys, R. Beccard, M. Heuken, B. Monemar

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    16 Citations (Scopus)

    Abstract

    Thick hydride vapor phase epitaxial GaN layers are grown on metalorganic chemical vapor deposited GaN template layers as well as directly on sapphire, with the aim of investigating the effect of the template on the strain relaxation and spatial distribution of free carriers in the overgrown GaN films. Spatially resolved cross-sectional micro-Raman spectroscopy, cathodoluminescence, and transmission electron microscopy show improved crystalline quality for growth on metalorganic chemical vapor deposited GaN templates. The highly doped and highly defective near-substrate layer composed of columnar domains, typically present in hydride vapor phase epitaxial GaN films grown directly on sapphire, is absent in the layers grown on templates. Consequently, this results in elimination of the nonuniformities of free electron distribution, a lower residual free carrier concentration (<1017 cm-3), and improved strain relaxation.

    Original languageEnglish
    Pages (from-to)6011-6016
    Number of pages6
    JournalJournal of Applied Physics
    Volume90
    Issue number12
    DOIs
    Publication statusPublished - 15 Dec 2001

    Bibliographical note

    An erratum exists for this article and can be found in Journal of applied physics, Vol. 91, Issue 10, p.6778. At doi: 10.1063/1.1471940

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