Emission properties of single InAs/GaAs quantum dot pairs and molecules grown in GaAs nanoholes

G. Munoz-Matutano*, J. Canet-Ferrer, P. Alonso-Gonzalez, Benito Alen, I. Fernandez-Martinez, Fernando Jose Martin-Sanchez, D. Fuster, Juan Martinez-Pastor, B. Y. Gonzalez, F. Briones, L. F. Gonzalez

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

We have studied the lateral coupling between InAs/GaAs quantum dot pairs embedded in a field-effect structure. Quantum dot pairs and molecules have been identified by the correlated evolution of the Coulomb blockade features of each QD in the pair. This behaviour is largely distorted in the presence of resonant coupling states in the QD molecule. Single QD voltage evolution shows a crossover in the lineshape profile, which is associated to Spectral Diffusion processes due to residual charged environment.

Original languageEnglish
Title of host publication11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11)
EditorsL Vina, C Tejedor, JM Calleja
Place of PublicationUK
PublisherIOP Publishing
Number of pages5
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event11th International Conference on Optics of Excitons in Confined Systems - Cantoblanco, Spain
Duration: 7 Sep 200911 Sep 2009

Publication series

NameJournal of Physics Conference Series
PublisherIOP PUBLISHING LTD
Volume210
ISSN (Print)1742-6588

Conference

Conference11th International Conference on Optics of Excitons in Confined Systems
CountrySpain
CityCantoblanco
Period7/09/0911/09/09

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