Energy band gap and optical properties of non-stoichiometric InN - Theory and experiment

Dimiter Alexandrov; K. Scott A Butcher; Trevor L. Tansley

doi:10.1016/j.jcrysgro.2005.12.006

Energy band gap and optical properties of non-stoichiometric InN - Theory and experiment

Dimiter Alexandrov^*, K. Scott A Butcher, Trevor L. Tansley

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The influence of antisite defects in InN is analyzed theoretically using a Linear Combination of Atomic Orbitals approach. The procedure used is validated by confirming the band gaps of common binary alloy semiconductor materials. InN with N_In and In_N antisite defects are then analyzed and it is found that in the case of InN:N_In, the excess nitrogen acts as a donor species with its level resident in the conduction band. For InN:In _N, it is shown that when there is a significant density of the excess indium present as the antisite defect, tunnel optical absorption should occur in the infrared at 0.2 eV.

Original language	English
Pages (from-to)	261-267
Number of pages	7
Journal	Journal of Crystal Growth
Volume	288
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.12.006
Publication status	Published - 1 Mar 2006

Access to Document

10.1016/j.jcrysgro.2005.12.006

Cite this

@article{9562ca995c224ce8a0036a462332912c,

title = "Energy band gap and optical properties of non-stoichiometric InN - Theory and experiment",

abstract = "The influence of antisite defects in InN is analyzed theoretically using a Linear Combination of Atomic Orbitals approach. The procedure used is validated by confirming the band gaps of common binary alloy semiconductor materials. InN with NIn and InN antisite defects are then analyzed and it is found that in the case of InN:NIn, the excess nitrogen acts as a donor species with its level resident in the conduction band. For InN:In N, it is shown that when there is a significant density of the excess indium present as the antisite defect, tunnel optical absorption should occur in the infrared at 0.2 eV.",

author = "Dimiter Alexandrov and Butcher, {K. Scott A} and Tansley, {Trevor L.}",

year = "2006",

month = mar,

day = "1",

doi = "10.1016/j.jcrysgro.2005.12.006",

language = "English",

volume = "288",

pages = "261--267",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Energy band gap and optical properties of non-stoichiometric InN - Theory and experiment

AU - Alexandrov, Dimiter

AU - Butcher, K. Scott A

AU - Tansley, Trevor L.

PY - 2006/3/1

Y1 - 2006/3/1

N2 - The influence of antisite defects in InN is analyzed theoretically using a Linear Combination of Atomic Orbitals approach. The procedure used is validated by confirming the band gaps of common binary alloy semiconductor materials. InN with NIn and InN antisite defects are then analyzed and it is found that in the case of InN:NIn, the excess nitrogen acts as a donor species with its level resident in the conduction band. For InN:In N, it is shown that when there is a significant density of the excess indium present as the antisite defect, tunnel optical absorption should occur in the infrared at 0.2 eV.

AB - The influence of antisite defects in InN is analyzed theoretically using a Linear Combination of Atomic Orbitals approach. The procedure used is validated by confirming the band gaps of common binary alloy semiconductor materials. InN with NIn and InN antisite defects are then analyzed and it is found that in the case of InN:NIn, the excess nitrogen acts as a donor species with its level resident in the conduction band. For InN:In N, it is shown that when there is a significant density of the excess indium present as the antisite defect, tunnel optical absorption should occur in the infrared at 0.2 eV.

UR - http://www.scopus.com/inward/record.url?scp=32644433587&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2005.12.006

DO - 10.1016/j.jcrysgro.2005.12.006

M3 - Article

AN - SCOPUS:32644433587

SN - 0022-0248

VL - 288

SP - 261

EP - 267

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Energy band gap and optical properties of non-stoichiometric InN - Theory and experiment

Abstract

Access to Document

Other files and links

Fingerprint

Cite this