Energy band gap and optical properties of non-stoichiometric InN - Theory and experiment

Dimiter Alexandrov*, K. Scott A Butcher, Trevor L. Tansley

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The influence of antisite defects in InN is analyzed theoretically using a Linear Combination of Atomic Orbitals approach. The procedure used is validated by confirming the band gaps of common binary alloy semiconductor materials. InN with NIn and InN antisite defects are then analyzed and it is found that in the case of InN:NIn, the excess nitrogen acts as a donor species with its level resident in the conduction band. For InN:In N, it is shown that when there is a significant density of the excess indium present as the antisite defect, tunnel optical absorption should occur in the infrared at 0.2 eV.

Original languageEnglish
Pages (from-to)261-267
Number of pages7
JournalJournal of Crystal Growth
Volume288
Issue number2
DOIs
Publication statusPublished - 1 Mar 2006

Fingerprint Dive into the research topics of 'Energy band gap and optical properties of non-stoichiometric InN - Theory and experiment'. Together they form a unique fingerprint.

Cite this