The growth artifact effects on absorption and photoluminescence properties of InN containing oxygen and In1-xAl1-xN interface layers were analyzed using electron band structure calculations. For penetration of Al atoms in InN, decrease of energy band gap of InN was observed. The exciton emissions for InxAl1-xN had an energy of 0.765-0.778 eV. A model of tetrahedral cell In-O was developed and energy band gap of InO yN1-y was also calculated. The results show that presence of O atoms in InN decreased the energy band gap.
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|Publication status||Published - May 2004|