TY - JOUR
T1 - Energy band gaps of InN containing oxygen and of the inxAl 1-xN interface layer formed during InN film growth
AU - Alexandrov, Dimiter
AU - Butcher, K. Scott A.
AU - Wintrebert-Fouquet, Marie
PY - 2004/5
Y1 - 2004/5
N2 - The growth artifact effects on absorption and photoluminescence properties of InN containing oxygen and In1-xAl1-xN interface layers were analyzed using electron band structure calculations. For penetration of Al atoms in InN, decrease of energy band gap of InN was observed. The exciton emissions for InxAl1-xN had an energy of 0.765-0.778 eV. A model of tetrahedral cell In-O was developed and energy band gap of InO yN1-y was also calculated. The results show that presence of O atoms in InN decreased the energy band gap.
AB - The growth artifact effects on absorption and photoluminescence properties of InN containing oxygen and In1-xAl1-xN interface layers were analyzed using electron band structure calculations. For penetration of Al atoms in InN, decrease of energy band gap of InN was observed. The exciton emissions for InxAl1-xN had an energy of 0.765-0.778 eV. A model of tetrahedral cell In-O was developed and energy band gap of InO yN1-y was also calculated. The results show that presence of O atoms in InN decreased the energy band gap.
UR - http://www.scopus.com/inward/record.url?scp=3142643625&partnerID=8YFLogxK
U2 - 10.1116/1.1633767
DO - 10.1116/1.1633767
M3 - Article
AN - SCOPUS:3142643625
SN - 0734-2101
VL - 22
SP - 954
EP - 961
JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
IS - 3
ER -