Energy band gaps of InN containing oxygen and of the inxAl 1-xN interface layer formed during InN film growth

Dimiter Alexandrov*, K. Scott A. Butcher, Marie Wintrebert-Fouquet

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

The growth artifact effects on absorption and photoluminescence properties of InN containing oxygen and In1-xAl1-xN interface layers were analyzed using electron band structure calculations. For penetration of Al atoms in InN, decrease of energy band gap of InN was observed. The exciton emissions for InxAl1-xN had an energy of 0.765-0.778 eV. A model of tetrahedral cell In-O was developed and energy band gap of InO yN1-y was also calculated. The results show that presence of O atoms in InN decreased the energy band gap.

Original languageEnglish
Pages (from-to)954-961
Number of pages8
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number3
DOIs
Publication statusPublished - May 2004

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