Energy band gaps of InN containing oxygen and of the inxAl 1-xN interface layer formed during InN film growth

Dimiter Alexandrov; K. Scott A. Butcher; Marie Wintrebert-Fouquet

doi:10.1116/1.1633767

Energy band gaps of InN containing oxygen and of the in_xAl _1-xN interface layer formed during InN film growth

Dimiter Alexandrov^*, K. Scott A. Butcher, Marie Wintrebert-Fouquet

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The growth artifact effects on absorption and photoluminescence properties of InN containing oxygen and In_1-xAl_1-xN interface layers were analyzed using electron band structure calculations. For penetration of Al atoms in InN, decrease of energy band gap of InN was observed. The exciton emissions for In_xAl_1-xN had an energy of 0.765-0.778 eV. A model of tetrahedral cell In-O was developed and energy band gap of InO _yN_1-y was also calculated. The results show that presence of O atoms in InN decreased the energy band gap.

Original language	English
Pages (from-to)	954-961
Number of pages	8
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	3
DOIs	https://doi.org/10.1116/1.1633767
Publication status	Published - May 2004

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title = "Energy band gaps of InN containing oxygen and of the inxAl 1-xN interface layer formed during InN film growth",

abstract = "The growth artifact effects on absorption and photoluminescence properties of InN containing oxygen and In1-xAl1-xN interface layers were analyzed using electron band structure calculations. For penetration of Al atoms in InN, decrease of energy band gap of InN was observed. The exciton emissions for InxAl1-xN had an energy of 0.765-0.778 eV. A model of tetrahedral cell In-O was developed and energy band gap of InO yN1-y was also calculated. The results show that presence of O atoms in InN decreased the energy band gap.",

author = "Dimiter Alexandrov and Butcher, \{K. Scott A.\} and Marie Wintrebert-Fouquet",

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T1 - Energy band gaps of InN containing oxygen and of the inxAl 1-xN interface layer formed during InN film growth

AU - Alexandrov, Dimiter

AU - Butcher, K. Scott A.

AU - Wintrebert-Fouquet, Marie

PY - 2004/5

Y1 - 2004/5

N2 - The growth artifact effects on absorption and photoluminescence properties of InN containing oxygen and In1-xAl1-xN interface layers were analyzed using electron band structure calculations. For penetration of Al atoms in InN, decrease of energy band gap of InN was observed. The exciton emissions for InxAl1-xN had an energy of 0.765-0.778 eV. A model of tetrahedral cell In-O was developed and energy band gap of InO yN1-y was also calculated. The results show that presence of O atoms in InN decreased the energy band gap.

AB - The growth artifact effects on absorption and photoluminescence properties of InN containing oxygen and In1-xAl1-xN interface layers were analyzed using electron band structure calculations. For penetration of Al atoms in InN, decrease of energy band gap of InN was observed. The exciton emissions for InxAl1-xN had an energy of 0.765-0.778 eV. A model of tetrahedral cell In-O was developed and energy band gap of InO yN1-y was also calculated. The results show that presence of O atoms in InN decreased the energy band gap.

UR - https://www.scopus.com/pages/publications/3142643625

U2 - 10.1116/1.1633767

DO - 10.1116/1.1633767

M3 - Article

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SN - 0734-2101

VL - 22

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JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 3

ER -

Energy band gaps of InN containing oxygen and of the in_xAl _1-xN interface layer formed during InN film growth

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