Abstract
Aluminium-assisted crystallization is used to grow single-crystalline Si x Ge 1-x film epitaxially on Si substrate at a relatively low temperature (350-450ºC). Investigation of the mechanism by which Al film causes epitaxial growth of Si x Ge 1-x suggests a four-step growth process is involved. The composition of the Si x Ge 1-x film can be controlled by the annealing conditions. This Si x Ge 1-x film can be used as a buffer layer for the epitaxial growth of Ge on Si or as a virtual substrate for the fabrication of III-V devices.
Original language | English |
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Pages (from-to) | 25-28 |
Number of pages | 4 |
Journal | Scripta Materialia |
Volume | 71 |
DOIs | |
Publication status | Published - 15 Jan 2014 |
Externally published | Yes |
Keywords
- aluminium-assisted crystallization
- sputtering
- epitaxy growth
- alloys
- thin films