Epitaxial growth of single-crystalline silicon-germanium on silicon by aluminium-assisted crystallization

Aluminium-assisted crystallization is used to grow single-crystalline Si _x Ge _1-x film epitaxially on Si substrate at a relatively low temperature (350-450ºC). Investigation of the mechanism by which Al film causes epitaxial growth of Si _x Ge _1-x suggests a four-step growth process is involved. The composition of the Si _x Ge _1-x film can be controlled by the annealing conditions. This Si _x Ge _1-x film can be used as a buffer layer for the epitaxial growth of Ge on Si or as a virtual substrate for the fabrication of III-V devices.