Epitaxial growth of single-crystalline silicon-germanium on silicon by aluminium-assisted crystallization

Ziheng Liu*, Xiaojing Hao, Fang Qi, Anita Ho-Baillie, Martin A. Green

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Aluminium-assisted crystallization is used to grow single-crystalline Si x Ge 1-x film epitaxially on Si substrate at a relatively low temperature (350-450ºC). Investigation of the mechanism by which Al film causes epitaxial growth of Si x Ge 1-x suggests a four-step growth process is involved. The composition of the Si x Ge 1-x film can be controlled by the annealing conditions. This Si x Ge 1-x film can be used as a buffer layer for the epitaxial growth of Ge on Si or as a virtual substrate for the fabrication of III-V devices.

Original languageEnglish
Pages (from-to)25-28
Number of pages4
JournalScripta Materialia
Volume71
DOIs
Publication statusPublished - 15 Jan 2014
Externally publishedYes

Keywords

  • aluminium-assisted crystallization
  • sputtering
  • epitaxy growth
  • alloys
  • thin films

Fingerprint Dive into the research topics of 'Epitaxial growth of single-crystalline silicon-germanium on silicon by aluminium-assisted crystallization'. Together they form a unique fingerprint.

  • Cite this