Aluminium-assisted crystallization is used to grow single-crystalline Si x Ge 1-x film epitaxially on Si substrate at a relatively low temperature (350-450ºC). Investigation of the mechanism by which Al film causes epitaxial growth of Si x Ge 1-x suggests a four-step growth process is involved. The composition of the Si x Ge 1-x film can be controlled by the annealing conditions. This Si x Ge 1-x film can be used as a buffer layer for the epitaxial growth of Ge on Si or as a virtual substrate for the fabrication of III-V devices.
- aluminium-assisted crystallization
- epitaxy growth
- thin films