Abstract
Si1−xCx films with
varying ratio of carbon to silicon (C/Si) were fabricated by magnetron
co-sputtering from a combined C and Si target. The composition in films
was changed by adjusting the ratio of sputtered target's area between C
and Si. Analysis of X-ray photoelectron spectroscopy
for as-deposited films shows that C/Si atomic ratios of our films have
ranges of 0.33–1.02. Thermal annealing of as-deposited films was carried
out at various temperatures from 800 to 1100 °C in a conventional
furnace. Fourier transform infrared spectra show a shift of Si–C stretching peak towards higher wavenumbers from ∼ 737 cm− 1 to ∼ 800 cm− 1 with increasing annealing temperature. From the results of Raman spectroscopy, X-ray diffraction and transmission electron microscopy, it was found that the dominant type of nanocrystals changes from Si to SiC in the films annealed at 1100 °C when the C/Si atomic ratio increases from 0.33 to 1.02.
Original language | English |
---|---|
Pages (from-to) | 3824-3830 |
Number of pages | 7 |
Journal | Thin Solid Films |
Volume | 516 |
Issue number | 12 |
DOIs | |
Publication status | Published - 30 Apr 2008 |
Externally published | Yes |
Keywords
- Sputtering
- Silicon carbide
- Annealing
- Silicon nanocrystal
- X-ray photoelectron spectroscopy
- Raman spectroscopy
- Infrared spectroscopy