Evolution of Si (and SiC) nanocrystal precipitation in SiC matrix

Dengyuan Song*, Eun-Chel Cho, Young-Hyun Cho, Gavin Conibeer, Yidan Huang, Shujuan Huang, Martin A. Green

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

75 Citations (Scopus)


Si1−xCx films with varying ratio of carbon to silicon (C/Si) were fabricated by magnetron co-sputtering from a combined C and Si target. The composition in films was changed by adjusting the ratio of sputtered target's area between C and Si. Analysis of X-ray photoelectron spectroscopy for as-deposited films shows that C/Si atomic ratios of our films have ranges of 0.33–1.02. Thermal annealing of as-deposited films was carried out at various temperatures from 800 to 1100 °C in a conventional furnace. Fourier transform infrared spectra show a shift of Si–C stretching peak towards higher wavenumbers from ∼ 737 cm− 1 to ∼ 800 cm− 1 with increasing annealing temperature. From the results of Raman spectroscopy, X-ray diffraction and transmission electron microscopy, it was found that the dominant type of nanocrystals changes from Si to SiC in the films annealed at 1100 °C when the C/Si atomic ratio increases from 0.33 to 1.02.
Original languageEnglish
Pages (from-to)3824-3830
Number of pages7
JournalThin Solid Films
Issue number12
Publication statusPublished - 30 Apr 2008
Externally publishedYes


  • Sputtering
  • Silicon carbide
  • Annealing
  • Silicon nanocrystal
  • X-ray photoelectron spectroscopy
  • Raman spectroscopy
  • Infrared spectroscopy

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