Abstract
The collisional processes responsible for populating and depopulating excited As+ levels in the He-As system have been studied using flowing afterglow techniques. Excitation of several As+ levels lying above the energetic limit for charge transfer from the neutral atom ground state has also been observed. The process responsible for this excitation has been identified as He+ charge transfer on arsenic metastables. The experiments further indicate strong effects due to rapid transfer of population among the excited As+ levels due to second-kind collisions of electrons. The very noticeable preference for abnormally high helium pressure for optimum operation of tbe He-As laser system can he understood in the light of these results.
Original language | English |
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Article number | 018 |
Pages (from-to) | 3731-3744 |
Number of pages | 14 |
Journal | Journal of Physics B: Atomic and Molecular Physics |
Volume | 11 |
Issue number | 21 |
DOIs | |
Publication status | Published - 1978 |