Abstract
The collisional processes responsible for populating and depopulating excited As+ levels in the He-As system have been studied using flowing afterglow techniques. Excitation of several As+ levels lying above the energetic limit for charge transfer from the neutral atom ground state has also been observed. The process responsible for this excitation has been identified as He+ charge transfer on arsenic metastables. The experiments further indicate strong effects due to rapid transfer of population among the excited As+ levels due to second-kind collisions of electrons. The very noticeable preference for abnormally high helium pressure for optimum operation of tbe He-As laser system can he understood in the light of these results.
| Original language | English |
|---|---|
| Article number | 018 |
| Pages (from-to) | 3731-3744 |
| Number of pages | 14 |
| Journal | Journal of Physics B: Atomic and Molecular Physics |
| Volume | 11 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - 1978 |