Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots

J. Canet-Ferrer, G. Munoz-Matutano, J. Herranz, D. Rivas, B. Alen, Y. Gonzalez, D. Fuster, L. Gonzalez, J. Martínez-Pastor

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithography. Optical characterization has been performed on such SCQDs to study the fundamental and excited states. At the ground state different exciton complex transitions of about 500 μeV linewidth have been identified and the fine structure splitting of the neutral exciton has been determined (≈65 μeV). The observed electronic structure covers the demands of future quantum information technologies.

Original languageEnglish
Article number183112
Pages (from-to)1-5
Number of pages5
JournalApplied Physics Letters
Volume103
Issue number18
DOIs
Publication statusPublished - 28 Oct 2013
Externally publishedYes

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