Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots

J. Canet-Ferrer; G. Munoz-Matutano; J. Herranz; D. Rivas; B. Alen; Y. Gonzalez; D. Fuster; L. Gonzalez; J. Martínez-Pastor

doi:10.1063/1.4828352

Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots

J. Canet-Ferrer, G. Munoz-Matutano, J. Herranz, D. Rivas, B. Alen, Y. Gonzalez, D. Fuster, L. Gonzalez, J. Martínez-Pastor

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithography. Optical characterization has been performed on such SCQDs to study the fundamental and excited states. At the ground state different exciton complex transitions of about 500 μeV linewidth have been identified and the fine structure splitting of the neutral exciton has been determined (≈65 μeV). The observed electronic structure covers the demands of future quantum information technologies.

Original language	English
Article number	183112
Pages (from-to)	1-5
Number of pages	5
Journal	Applied Physics Letters
Volume	103
Issue number	18
DOIs	https://doi.org/10.1063/1.4828352
Publication status	Published - 28 Oct 2013
Externally published	Yes

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abstract = "We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithography. Optical characterization has been performed on such SCQDs to study the fundamental and excited states. At the ground state different exciton complex transitions of about 500 μeV linewidth have been identified and the fine structure splitting of the neutral exciton has been determined (≈65 μeV). The observed electronic structure covers the demands of future quantum information technologies.",

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AU - Canet-Ferrer, J.

AU - Munoz-Matutano, G.

AU - Herranz, J.

AU - Rivas, D.

AU - Alen, B.

AU - Gonzalez, Y.

AU - Fuster, D.

AU - Gonzalez, L.

AU - Martínez-Pastor, J.

PY - 2013/10/28

Y1 - 2013/10/28

N2 - We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithography. Optical characterization has been performed on such SCQDs to study the fundamental and excited states. At the ground state different exciton complex transitions of about 500 μeV linewidth have been identified and the fine structure splitting of the neutral exciton has been determined (≈65 μeV). The observed electronic structure covers the demands of future quantum information technologies.

AB - We have studied the optical properties of InAs site-controlled quantum dots (SCQDs) grown on pre-patterned GaAs substrates. Since InAs nucleates preferentially on the lithography motifs, the location of the resulting QDs is determined by the pattern, which is fabricated by local oxidation nanolithography. Optical characterization has been performed on such SCQDs to study the fundamental and excited states. At the ground state different exciton complex transitions of about 500 μeV linewidth have been identified and the fine structure splitting of the neutral exciton has been determined (≈65 μeV). The observed electronic structure covers the demands of future quantum information technologies.

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Exciton and multiexciton optical properties of single InAs/GaAs site-controlled quantum dots

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