Exploring nitrides: a promising alternative class of narrow bandgap semiconductors

Nitrides are emerging as a highly promising class of narrow bandgap semiconductors, recognized for their distinctive electronic and optical properties. Narrow bandgap nitrides, with bandgaps typically ranging from 1.5 to 0.5 eV, are strategically positioned within the visible-to-infrared light spectrum, making them ideal candidates for a wide array of optoelectronic and energy storage applications. Despite the potential, precise bandgap tuning and reliable fabrication of these materials remain challenging. However, advancements in doping, alloying, and growth optimization have significantly enhanced their versatility, allowing for fine-tuning of bandgaps to meet specific application requirements. This review explores the growing significance of narrow-bandgap nitrides, focusing on their classification, compositional engineering, bandgap modulation through doping, and state-of-the-art fabrication techniques.

Particular attention is given to their applications in photovoltaics, energy storage, sensing, and detection, emphasizing recent breakthroughs in narrow-bandgap nitride semiconductors. These developments open new avenues for innovation across diverse technological fields, positioning narrow-bandgap nitrides as key materials for next-generation energy applications. Continued research and characterization promise to further advance the performance and efficiency of modern devices and systems.