Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitation

Yi Zhang, Murad J. Y. Tayebjee, Suntrana Smyth, Miroslav Dvořák, Xiaoming Wen, Hongze Xia, Martin Heilmann, Yuanxun Liao, Zewen Zhang, Todd Williamson, Joshua Williams, Stephen Bremner, Santosh Shrestha, Shujuan Huang, Timothy W. Schmidt, Gavin J. Conibeer

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16 Citations (Scopus)


We have investigated the ultrafast carrier dynamics in a 1 μm bulk In0.265Ga0.735N thin film grown using energetic neutral atom-beam lithography/epitaxy molecular beam epitaxy. Cathodoluminescence and X-ray diffraction experiments are used to observe the existence of indium-rich domains in the sample. These domains give rise to a second carrier population and bi-exponential carrier cooling is observed with characteristic lifetimes of 1.6 and 14 ps at a carrier density of 1.3 × 1016cm-3. A combination of band-filling, screening, and hot-phonon effects gives rise to a two-fold enhanced mono-exponential cooling rate of 28 ps at a carrier density of 8.4 × 1018cm-3. This is the longest carrier thermalization time observed in bulk InGaN alloys to date.

Original languageEnglish
Article number131904
Pages (from-to)1-5
Number of pages5
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 28 Mar 2016
Externally publishedYes

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