Extraction of a trapping model over an extended bias range for GaN and GaAs HEMTs

Jabra Tarazi, James G. Rathmell, Anthony E. Parker, Simon J. Mahon

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

3 Citations (Scopus)

Abstract

A simple procedure for extracting parameters of a bias-dependent trap model for GaN and GaAs is presented. The extraction is achieved based on a mapping of the steady-state trap-centre potential for a representative range of the bias voltages. The circuit model of trapping is verified in the process. The time constant for emission is also extracted. It is demonstrated that the model is able to predict device response and time constants in both capture and emission states. Bias-dependence of trapping and associated time constants is successfully modeled.

Original languageEnglish
Title of host publication2017 IEEE MTT-S International Microwave Symposium (IMS)
Place of PublicationPiscataway, NJ, USA
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages244-247
Number of pages4
ISBN (Electronic)9781509063604
DOIs
Publication statusPublished - 4 Oct 2017
Event2017 IEEE MTT-S International Microwave Symposium, IMS 2017 - Honololu, United States
Duration: 4 Jun 20179 Jun 2017

Conference

Conference2017 IEEE MTT-S International Microwave Symposium, IMS 2017
CountryUnited States
CityHonololu
Period4/06/179/06/17

Keywords

  • Microwave FET
  • Semiconductor charge-carrier processes
  • Semiconductor device measurements
  • Semiconductor device modeling

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