Extraction of a trapping model over an extended bias range for GaN and GaAs HEMTs

Jabra Tarazi; James G. Rathmell; Anthony E. Parker; Simon J. Mahon

doi:10.1109/MWSYM.2017.8059086

Extraction of a trapping model over an extended bias range for GaN and GaAs HEMTs

Jabra Tarazi, James G. Rathmell, Anthony E. Parker, Simon J. Mahon

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

5 Citations (Scopus)

Abstract

A simple procedure for extracting parameters of a bias-dependent trap model for GaN and GaAs is presented. The extraction is achieved based on a mapping of the steady-state trap-centre potential for a representative range of the bias voltages. The circuit model of trapping is verified in the process. The time constant for emission is also extracted. It is demonstrated that the model is able to predict device response and time constants in both capture and emission states. Bias-dependence of trapping and associated time constants is successfully modeled.

Original language	English
Title of host publication	2017 IEEE MTT-S International Microwave Symposium (IMS)
Place of Publication	Piscataway, NJ, USA
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	244-247
Number of pages	4
ISBN (Electronic)	9781509063604
DOIs	https://doi.org/10.1109/MWSYM.2017.8059086
Publication status	Published - 4 Oct 2017
Event	2017 IEEE MTT-S International Microwave Symposium, IMS 2017 - Honololu, United States Duration: 4 Jun 2017 → 9 Jun 2017

Conference

Conference	2017 IEEE MTT-S International Microwave Symposium, IMS 2017
Country/Territory	United States
City	Honololu
Period	4/06/17 → 9/06/17

Keywords

Microwave FET
Semiconductor charge-carrier processes
Semiconductor device measurements
Semiconductor device modeling

Access to Document

10.1109/MWSYM.2017.8059086

Cite this

@inproceedings{d8f84c51e20b4efbbf63090dc11ca965,

title = "Extraction of a trapping model over an extended bias range for GaN and GaAs HEMTs",

abstract = "A simple procedure for extracting parameters of a bias-dependent trap model for GaN and GaAs is presented. The extraction is achieved based on a mapping of the steady-state trap-centre potential for a representative range of the bias voltages. The circuit model of trapping is verified in the process. The time constant for emission is also extracted. It is demonstrated that the model is able to predict device response and time constants in both capture and emission states. Bias-dependence of trapping and associated time constants is successfully modeled.",

keywords = "Microwave FET, Semiconductor charge-carrier processes, Semiconductor device measurements, Semiconductor device modeling",

author = "Jabra Tarazi and Rathmell, \{James G.\} and Parker, \{Anthony E.\} and Mahon, \{Simon J.\}",

year = "2017",

month = oct,

day = "4",

doi = "10.1109/MWSYM.2017.8059086",

language = "English",

pages = "244--247",

booktitle = "2017 IEEE MTT-S International Microwave Symposium (IMS)",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2017 IEEE MTT-S International Microwave Symposium, IMS 2017 ; Conference date: 04-06-2017 Through 09-06-2017",

}

Tarazi, J, Rathmell, JG, Parker, AE & Mahon, SJ 2017, Extraction of a trapping model over an extended bias range for GaN and GaAs HEMTs. in 2017 IEEE MTT-S International Microwave Symposium (IMS)., 8059086, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, USA, pp. 244-247, 2017 IEEE MTT-S International Microwave Symposium, IMS 2017, Honololu, United States, 4/06/17. https://doi.org/10.1109/MWSYM.2017.8059086

Extraction of a trapping model over an extended bias range for GaN and GaAs HEMTs. / Tarazi, Jabra; Rathmell, James G.; Parker, Anthony E. et al.
2017 IEEE MTT-S International Microwave Symposium (IMS). Piscataway, NJ, USA: Institute of Electrical and Electronics Engineers (IEEE), 2017. p. 244-247 8059086.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Extraction of a trapping model over an extended bias range for GaN and GaAs HEMTs

AU - Tarazi, Jabra

AU - Rathmell, James G.

AU - Parker, Anthony E.

AU - Mahon, Simon J.

PY - 2017/10/4

Y1 - 2017/10/4

N2 - A simple procedure for extracting parameters of a bias-dependent trap model for GaN and GaAs is presented. The extraction is achieved based on a mapping of the steady-state trap-centre potential for a representative range of the bias voltages. The circuit model of trapping is verified in the process. The time constant for emission is also extracted. It is demonstrated that the model is able to predict device response and time constants in both capture and emission states. Bias-dependence of trapping and associated time constants is successfully modeled.

AB - A simple procedure for extracting parameters of a bias-dependent trap model for GaN and GaAs is presented. The extraction is achieved based on a mapping of the steady-state trap-centre potential for a representative range of the bias voltages. The circuit model of trapping is verified in the process. The time constant for emission is also extracted. It is demonstrated that the model is able to predict device response and time constants in both capture and emission states. Bias-dependence of trapping and associated time constants is successfully modeled.

KW - Microwave FET

KW - Semiconductor charge-carrier processes

KW - Semiconductor device measurements

KW - Semiconductor device modeling

UR - https://www.scopus.com/pages/publications/85032490458

U2 - 10.1109/MWSYM.2017.8059086

DO - 10.1109/MWSYM.2017.8059086

M3 - Conference proceeding contribution

AN - SCOPUS:85032490458

SP - 244

EP - 247

BT - 2017 IEEE MTT-S International Microwave Symposium (IMS)

PB - Institute of Electrical and Electronics Engineers (IEEE)

CY - Piscataway, NJ, USA

T2 - 2017 IEEE MTT-S International Microwave Symposium, IMS 2017

Y2 - 4 June 2017 through 9 June 2017

ER -

Extraction of a trapping model over an extended bias range for GaN and GaAs HEMTs

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this