Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

Ya I. Alivov*, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, D. M. Bagnall

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

466 Citations (Scopus)

Abstract

The use of hydride vapor phase epitaxy to grow p-AlGaN heterojunction light emitting diodes on SiC substrates was discussed. On forward biasing the diodes an intense ultraviolet emission with a peak wavelength near 389 nm was observed. The stability of the device performance at temperatures up to 500 K indicated its possible use in harsh environments. The I-V characteristics of the structure were found comparable to homojunction and heterojunction devices. The use of chemical vapor deposition to grow n-ZnO layers was also discussed.

Original languageEnglish
Pages (from-to)4719-4721
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number23
DOIs
Publication statusPublished - 8 Dec 2003
Externally publishedYes

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