Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

Ya I. Alivov; E. V. Kalinina; A. E. Cherenkov; D. C. Look; B. M. Ataev; A. K. Omaev; M. V. Chukichev; D. M. Bagnall

doi:10.1063/1.1632537

Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

Ya I. Alivov^*, E. V. Kalinina, A. E. Cherenkov, D. C. Look, B. M. Ataev, A. K. Omaev, M. V. Chukichev, D. M. Bagnall

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

184 Citations (Scopus)

Abstract

The use of hydride vapor phase epitaxy to grow p-AlGaN heterojunction light emitting diodes on SiC substrates was discussed. On forward biasing the diodes an intense ultraviolet emission with a peak wavelength near 389 nm was observed. The stability of the device performance at temperatures up to 500 K indicated its possible use in harsh environments. The I-V characteristics of the structure were found comparable to homojunction and heterojunction devices. The use of chemical vapor deposition to grow n-ZnO layers was also discussed.

Original language	English
Pages (from-to)	4719-4721
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	23
DOIs	https://doi.org/10.1063/1.1632537
Publication status	Published - 8 Dec 2003
Externally published	Yes

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title = "Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates",

abstract = "The use of hydride vapor phase epitaxy to grow p-AlGaN heterojunction light emitting diodes on SiC substrates was discussed. On forward biasing the diodes an intense ultraviolet emission with a peak wavelength near 389 nm was observed. The stability of the device performance at temperatures up to 500 K indicated its possible use in harsh environments. The I-V characteristics of the structure were found comparable to homojunction and heterojunction devices. The use of chemical vapor deposition to grow n-ZnO layers was also discussed.",

author = "Alivov, {Ya I.} and Kalinina, {E. V.} and Cherenkov, {A. E.} and Look, {D. C.} and Ataev, {B. M.} and Omaev, {A. K.} and Chukichev, {M. V.} and Bagnall, {D. M.}",

year = "2003",

month = dec,

day = "8",

doi = "10.1063/1.1632537",

language = "English",

volume = "83",

pages = "4719--4721",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

AU - Alivov, Ya I.

AU - Kalinina, E. V.

AU - Cherenkov, A. E.

AU - Look, D. C.

AU - Ataev, B. M.

AU - Omaev, A. K.

AU - Chukichev, M. V.

AU - Bagnall, D. M.

PY - 2003/12/8

Y1 - 2003/12/8

N2 - The use of hydride vapor phase epitaxy to grow p-AlGaN heterojunction light emitting diodes on SiC substrates was discussed. On forward biasing the diodes an intense ultraviolet emission with a peak wavelength near 389 nm was observed. The stability of the device performance at temperatures up to 500 K indicated its possible use in harsh environments. The I-V characteristics of the structure were found comparable to homojunction and heterojunction devices. The use of chemical vapor deposition to grow n-ZnO layers was also discussed.

AB - The use of hydride vapor phase epitaxy to grow p-AlGaN heterojunction light emitting diodes on SiC substrates was discussed. On forward biasing the diodes an intense ultraviolet emission with a peak wavelength near 389 nm was observed. The stability of the device performance at temperatures up to 500 K indicated its possible use in harsh environments. The I-V characteristics of the structure were found comparable to homojunction and heterojunction devices. The use of chemical vapor deposition to grow n-ZnO layers was also discussed.

UR - http://www.scopus.com/inward/record.url?scp=0346910469&partnerID=8YFLogxK

U2 - 10.1063/1.1632537

DO - 10.1063/1.1632537

M3 - Article

AN - SCOPUS:0346910469

SN - 0003-6951

VL - 83

SP - 4719

EP - 4721

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

ER -

Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates

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