The use of hydride vapor phase epitaxy to grow p-AlGaN heterojunction light emitting diodes on SiC substrates was discussed. On forward biasing the diodes an intense ultraviolet emission with a peak wavelength near 389 nm was observed. The stability of the device performance at temperatures up to 500 K indicated its possible use in harsh environments. The I-V characteristics of the structure were found comparable to homojunction and heterojunction devices. The use of chemical vapor deposition to grow n-ZnO layers was also discussed.