Fabrication and characterization of near thresholdless lasers at room temperature

I. Prieto; J. M. Llorens; L. E. Muñoz-Camúñez; C. Robles; A. G. Taboada; J. Canet-Ferrer; J. M. Ripalda; G. Muñoz-Matutano; J. P. Martínez-Pastor; P. A. Postigo

doi:10.1117/12.2190097

Fabrication and characterization of near thresholdless lasers at room temperature

I. Prieto, J. M. Llorens, L. E. Muñoz-Camúñez, C. Robles, A. G. Taboada, J. Canet-Ferrer, J. M. Ripalda, G. Muñoz-Matutano, J. P. Martínez-Pastor, P. A. Postigo

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

Abstract

In this work we report room temperature (RT) continuous wave (c.w.) lasing at 1.3 μm in photonic crystal microcavities with a single layer of self-assembled InAsSb quantum dots (QDs) embedded in a photonic crystal microcavity. The laser exhibited ultra-low power threshold (860 nW) and high efficiency (β=0.85), thus operating in the near thresholdless regime. The results open up a wide range of opportunities for room temperature applications of ultra-low threshold lasers, such as integrated photonic circuitry or high sensitivity biosensors.

Original language	English
Title of host publication	Active Photonic Materials VII
Editors	Ganapathi S. Subramania, Stavroula Foteinopoulou
Place of Publication	Bellingham, WA
Publisher	SPIE
Pages	1-6
Number of pages	6
ISBN (Electronic)	9781628417128
DOIs	https://doi.org/10.1117/12.2190097
Publication status	Published - 2015
Externally published	Yes
Event	Active Photonic Materials VII Conference - San Diego, United States Duration: 9 Aug 2015 → 13 Aug 2015

Publication series

Name	Proceedings of SPIE
Publisher	SPIE
Volume	9546
ISSN (Print)	0277-786X

Other

Other	Active Photonic Materials VII Conference
Country/Territory	United States
City	San Diego
Period	9/08/15 → 13/08/15

Keywords

Optoelectronics
Photonic crystals
Photonic integrated circuits
quantum dots
room temperature operation
Semiconductor lasers

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10.1117/12.2190097

Cite this

Prieto, I., Llorens, J. M., Muñoz-Camúñez, L. E., Robles, C., Taboada, A. G., Canet-Ferrer, J., Ripalda, J. M., Muñoz-Matutano, G., Martínez-Pastor, J. P., & Postigo, P. A. (2015). Fabrication and characterization of near thresholdless lasers at room temperature. In G. S. Subramania, & S. Foteinopoulou (Eds.), Active Photonic Materials VII (pp. 1-6). Article 95460D (Proceedings of SPIE; Vol. 9546). SPIE. https://doi.org/10.1117/12.2190097

@inproceedings{cebef9f503444e34b177924661350918,

title = "Fabrication and characterization of near thresholdless lasers at room temperature",

abstract = "In this work we report room temperature (RT) continuous wave (c.w.) lasing at 1.3 μm in photonic crystal microcavities with a single layer of self-assembled InAsSb quantum dots (QDs) embedded in a photonic crystal microcavity. The laser exhibited ultra-low power threshold (860 nW) and high efficiency (β=0.85), thus operating in the near thresholdless regime. The results open up a wide range of opportunities for room temperature applications of ultra-low threshold lasers, such as integrated photonic circuitry or high sensitivity biosensors.",

keywords = "Optoelectronics, Photonic crystals, Photonic integrated circuits, quantum dots, room temperature operation, Semiconductor lasers",

author = "I. Prieto and Llorens, {J. M.} and Mu{\~n}oz-Cam{\'u}{\~n}ez, {L. E.} and C. Robles and Taboada, {A. G.} and J. Canet-Ferrer and Ripalda, {J. M.} and G. Mu{\~n}oz-Matutano and Mart{\'i}nez-Pastor, {J. P.} and Postigo, {P. A.}",

year = "2015",

doi = "10.1117/12.2190097",

language = "English",

series = "Proceedings of SPIE",

publisher = "SPIE",

pages = "1--6",

editor = "Subramania, {Ganapathi S.} and Stavroula Foteinopoulou",

booktitle = "Active Photonic Materials VII",

address = "United States",

note = "Active Photonic Materials VII Conference ; Conference date: 09-08-2015 Through 13-08-2015",

}

Prieto, I, Llorens, JM, Muñoz-Camúñez, LE, Robles, C, Taboada, AG, Canet-Ferrer, J, Ripalda, JM, Muñoz-Matutano, G, Martínez-Pastor, JP & Postigo, PA 2015, Fabrication and characterization of near thresholdless lasers at room temperature. in GS Subramania & S Foteinopoulou (eds), Active Photonic Materials VII., 95460D, Proceedings of SPIE, vol. 9546, SPIE, Bellingham, WA, pp. 1-6, Active Photonic Materials VII Conference, San Diego, United States, 9/08/15. https://doi.org/10.1117/12.2190097

Fabrication and characterization of near thresholdless lasers at room temperature. / Prieto, I.; Llorens, J. M.; Muñoz-Camúñez, L. E. et al.
Active Photonic Materials VII. ed. / Ganapathi S. Subramania; Stavroula Foteinopoulou. Bellingham, WA: SPIE, 2015. p. 1-6 95460D (Proceedings of SPIE; Vol. 9546).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Fabrication and characterization of near thresholdless lasers at room temperature

AU - Prieto, I.

AU - Llorens, J. M.

AU - Muñoz-Camúñez, L. E.

AU - Robles, C.

AU - Taboada, A. G.

AU - Canet-Ferrer, J.

AU - Ripalda, J. M.

AU - Muñoz-Matutano, G.

AU - Martínez-Pastor, J. P.

AU - Postigo, P. A.

PY - 2015

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N2 - In this work we report room temperature (RT) continuous wave (c.w.) lasing at 1.3 μm in photonic crystal microcavities with a single layer of self-assembled InAsSb quantum dots (QDs) embedded in a photonic crystal microcavity. The laser exhibited ultra-low power threshold (860 nW) and high efficiency (β=0.85), thus operating in the near thresholdless regime. The results open up a wide range of opportunities for room temperature applications of ultra-low threshold lasers, such as integrated photonic circuitry or high sensitivity biosensors.

AB - In this work we report room temperature (RT) continuous wave (c.w.) lasing at 1.3 μm in photonic crystal microcavities with a single layer of self-assembled InAsSb quantum dots (QDs) embedded in a photonic crystal microcavity. The laser exhibited ultra-low power threshold (860 nW) and high efficiency (β=0.85), thus operating in the near thresholdless regime. The results open up a wide range of opportunities for room temperature applications of ultra-low threshold lasers, such as integrated photonic circuitry or high sensitivity biosensors.

KW - Optoelectronics

KW - Photonic crystals

KW - Photonic integrated circuits

KW - quantum dots

KW - room temperature operation

KW - Semiconductor lasers

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BT - Active Photonic Materials VII

A2 - Subramania, Ganapathi S.

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CY - Bellingham, WA

T2 - Active Photonic Materials VII Conference

Y2 - 9 August 2015 through 13 August 2015

ER -

Fabrication and characterization of near thresholdless lasers at room temperature

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