Fabrication and characterization of near thresholdless lasers at room temperature

I. Prieto, J. M. Llorens, L. E. Muñoz-Camúñez, C. Robles, A. G. Taboada, J. Canet-Ferrer, J. M. Ripalda, G. Muñoz-Matutano, J. P. Martínez-Pastor, P. A. Postigo

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

In this work we report room temperature (RT) continuous wave (c.w.) lasing at 1.3 μm in photonic crystal microcavities with a single layer of self-assembled InAsSb quantum dots (QDs) embedded in a photonic crystal microcavity. The laser exhibited ultra-low power threshold (860 nW) and high efficiency (β=0.85), thus operating in the near thresholdless regime. The results open up a wide range of opportunities for room temperature applications of ultra-low threshold lasers, such as integrated photonic circuitry or high sensitivity biosensors.

Original languageEnglish
Title of host publicationActive Photonic Materials VII
EditorsGanapathi S. Subramania, Stavroula Foteinopoulou
Place of PublicationBellingham, WA
PublisherSPIE
Pages1-6
Number of pages6
ISBN (Electronic)9781628417128
DOIs
Publication statusPublished - 2015
Externally publishedYes
EventActive Photonic Materials VII Conference - San Diego, United States
Duration: 9 Aug 201513 Aug 2015

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume9546
ISSN (Print)0277-786X

Other

OtherActive Photonic Materials VII Conference
CountryUnited States
CitySan Diego
Period9/08/1513/08/15

Keywords

  • Optoelectronics
  • Photonic crystals
  • Photonic integrated circuits
  • quantum dots
  • room temperature operation
  • Semiconductor lasers

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