Fabrication and characterization of tin-based nanocrystals

Shujuan Huang*, Eun-Chel Cho, Gavin Conibeer, Martin A. Green, Daniel Bellet, Edith Bellet-Amalric, Shuying Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Sn-based nanocrystals were prepared by depositing Sn-rich SiO2 films using a cosputtering process and a subsequent vacuum annealing. Transmission electron microscopy (TEM) and x-ray diffraction showed formation of Sn nanocrystals evenly distributed in SiO2 matrix at relatively low annealing temperature of 400°C. The size of Sn nanocrystals increased with increasing annealing temperature. X-ray photoelectron spectroscopy revealed that Sn was partially oxidized during the cosputtering process forming Sn oxide nanoclusters of 3.4±0.6nm in diameter after annealing, as observed by TEM. The Sn-based nanocrystal films exhibited wide optical bandgap around 4.2–4.4eV and a slightly high-energy shift with increasing annealing temperature. This result is in close agreement with the absorption in the Sn oxide nanoclusters as well as Sn-related oxygen defects in the matrix.

Original languageEnglish
Article number114304
Pages (from-to)1-6
Number of pages6
JournalJournal of Applied Physics
Issue number11
Publication statusPublished - 1 Dec 2007
Externally publishedYes


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