Fabrication and characterization of tin-based nanocrystals

Shujuan Huang; Eun-Chel Cho; Gavin Conibeer; Martin A. Green; Daniel Bellet; Edith Bellet-Amalric; Shuying Cheng

doi:10.1063/1.2817902

Fabrication and characterization of tin-based nanocrystals

Shujuan Huang^*, Eun-Chel Cho, Gavin Conibeer, Martin A. Green, Daniel Bellet, Edith Bellet-Amalric, Shuying Cheng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Sn-based nanocrystals were prepared by depositing Sn-rich SiO2 films using a cosputtering process and a subsequent vacuum annealing. Transmission electron microscopy (TEM) and x-ray diffraction showed formation of Sn nanocrystals evenly distributed in SiO2 matrix at relatively low annealing temperature of 400°C. The size of Sn nanocrystals increased with increasing annealing temperature. X-ray photoelectron spectroscopy revealed that Sn was partially oxidized during the cosputtering process forming Sn oxide nanoclusters of 3.4±0.6nm in diameter after annealing, as observed by TEM. The Sn-based nanocrystal films exhibited wide optical bandgap around 4.2–4.4eV and a slightly high-energy shift with increasing annealing temperature. This result is in close agreement with the absorption in the Sn oxide nanoclusters as well as Sn-related oxygen defects in the matrix.

Original language	English
Article number	114304
Pages (from-to)	1-6
Number of pages	6
Journal	Journal of Applied Physics
Volume	102
Issue number	11
DOIs	https://doi.org/10.1063/1.2817902
Publication status	Published - 1 Dec 2007
Externally published	Yes

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@article{f9179e8f43ae4870bafbdda8fcec0441,

title = "Fabrication and characterization of tin-based nanocrystals",

abstract = "Sn-based nanocrystals were prepared by depositing Sn-rich SiO2 films using a cosputtering process and a subsequent vacuum annealing. Transmission electron microscopy (TEM) and x-ray diffraction showed formation of Sn nanocrystals evenly distributed in SiO2 matrix at relatively low annealing temperature of 400°C. The size of Sn nanocrystals increased with increasing annealing temperature. X-ray photoelectron spectroscopy revealed that Sn was partially oxidized during the cosputtering process forming Sn oxide nanoclusters of 3.4±0.6nm in diameter after annealing, as observed by TEM. The Sn-based nanocrystal films exhibited wide optical bandgap around 4.2–4.4eV and a slightly high-energy shift with increasing annealing temperature. This result is in close agreement with the absorption in the Sn oxide nanoclusters as well as Sn-related oxygen defects in the matrix.",

author = "Shujuan Huang and Eun-Chel Cho and Gavin Conibeer and Green, {Martin A.} and Daniel Bellet and Edith Bellet-Amalric and Shuying Cheng",

year = "2007",

month = dec,

day = "1",

doi = "10.1063/1.2817902",

language = "English",

volume = "102",

pages = "1--6",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Fabrication and characterization of tin-based nanocrystals

AU - Huang, Shujuan

AU - Cho, Eun-Chel

AU - Conibeer, Gavin

AU - Green, Martin A.

AU - Bellet, Daniel

AU - Bellet-Amalric, Edith

AU - Cheng, Shuying

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Sn-based nanocrystals were prepared by depositing Sn-rich SiO2 films using a cosputtering process and a subsequent vacuum annealing. Transmission electron microscopy (TEM) and x-ray diffraction showed formation of Sn nanocrystals evenly distributed in SiO2 matrix at relatively low annealing temperature of 400°C. The size of Sn nanocrystals increased with increasing annealing temperature. X-ray photoelectron spectroscopy revealed that Sn was partially oxidized during the cosputtering process forming Sn oxide nanoclusters of 3.4±0.6nm in diameter after annealing, as observed by TEM. The Sn-based nanocrystal films exhibited wide optical bandgap around 4.2–4.4eV and a slightly high-energy shift with increasing annealing temperature. This result is in close agreement with the absorption in the Sn oxide nanoclusters as well as Sn-related oxygen defects in the matrix.

AB - Sn-based nanocrystals were prepared by depositing Sn-rich SiO2 films using a cosputtering process and a subsequent vacuum annealing. Transmission electron microscopy (TEM) and x-ray diffraction showed formation of Sn nanocrystals evenly distributed in SiO2 matrix at relatively low annealing temperature of 400°C. The size of Sn nanocrystals increased with increasing annealing temperature. X-ray photoelectron spectroscopy revealed that Sn was partially oxidized during the cosputtering process forming Sn oxide nanoclusters of 3.4±0.6nm in diameter after annealing, as observed by TEM. The Sn-based nanocrystal films exhibited wide optical bandgap around 4.2–4.4eV and a slightly high-energy shift with increasing annealing temperature. This result is in close agreement with the absorption in the Sn oxide nanoclusters as well as Sn-related oxygen defects in the matrix.

UR - http://www.scopus.com/inward/record.url?scp=37149012014&partnerID=8YFLogxK

U2 - 10.1063/1.2817902

DO - 10.1063/1.2817902

M3 - Article

AN - SCOPUS:37149012014

SN - 0021-8979

VL - 102

SP - 1

EP - 6

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

M1 - 114304

ER -

Fabrication and characterization of tin-based nanocrystals

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