Fabrication and ab initio study of downscaled graphene nanoelectronic devices

Hiroshi Mizuta; Zakaria Moktadir; Stuart A. Boden; Nima Kalhor; Shuojin Hang; Marek E. Schmidt; Nguyen Tien Cuong; Dam Hieu Chi; Nobuo Otsuka; Muruagnathan Manoharan; Yoshishige Tsuchiya; Harold Chong; Harvey N. Rutt; Darren M. Bagnall

doi:10.1117/12.956439

Fabrication and ab initio study of downscaled graphene nanoelectronic devices

Hiroshi Mizuta^*, Zakaria Moktadir, Stuart A. Boden, Nima Kalhor, Shuojin Hang, Marek E. Schmidt, Nguyen Tien Cuong, Dam Hieu Chi, Nobuo Otsuka, Muruagnathan Manoharan, Yoshishige Tsuchiya, Harold Chong, Harvey N. Rutt, Darren M. Bagnall

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

2 Citations (Scopus)

Abstract

In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size helium ion beam. We address the issue of contamination caused by the electron-beam lithography process to pattern the contact metals prior to the ultrafine milling process in the helium ion microscope (HIM). We then present our recent experimental study of the effects of the helium ion exposure on the carrier transport properties. By varying the time of helium ion bombardment onto a bilayer graphene nanoribbon transistor, the change in the transfer characteristics is investigated along with underlying carrier scattering mechanisms. Finally we study the effects of various single defects introduced into extremely-scaled armchair graphene nanoribbons on the carrier transport properties using ab initio simulation.

Original language	English
Title of host publication	Carbon Nanotubes, Graphene, and Associated Devices V
Editors	Didier Pribat, Young-Hee Lee, Manijeh Razeghi
Place of Publication	Washington
Publisher	SPIE
Number of pages	12
ISBN (Print)	9780819491794
DOIs	https://doi.org/10.1117/12.956439
Publication status	Published - 2012
Externally published	Yes
Event	Carbon Nanotubes, Graphene, and Associated Devices V - San Diego, CA, United States Duration: 14 Aug 2012 → 15 Aug 2012

Publication series

Name	Proceedings of SPIE
Publisher	SPIE
Volume	8462
ISSN (Print)	0277-786X

Conference

Conference	Carbon Nanotubes, Graphene, and Associated Devices V
Country/Territory	United States
City	San Diego, CA
Period	14/08/12 → 15/08/12

Keywords

ab initio simulation
disorder
graphene
helium ion microscope
nanofabrication
nanoribbon
point defect
quantum dot

Access to Document

10.1117/12.956439

Cite this

Mizuta, H., Moktadir, Z., Boden, S. A., Kalhor, N., Hang, S., Schmidt, M. E., Cuong, N. T., Chi, D. H., Otsuka, N., Manoharan, M., Tsuchiya, Y., Chong, H., Rutt, H. N., & Bagnall, D. M. (2012). Fabrication and ab initio study of downscaled graphene nanoelectronic devices. In D. Pribat, Y-H. Lee, & M. Razeghi (Eds.), Carbon Nanotubes, Graphene, and Associated Devices V [846206] (Proceedings of SPIE; Vol. 8462). SPIE. https://doi.org/10.1117/12.956439

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title = "Fabrication and ab initio study of downscaled graphene nanoelectronic devices",

abstract = "In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size helium ion beam. We address the issue of contamination caused by the electron-beam lithography process to pattern the contact metals prior to the ultrafine milling process in the helium ion microscope (HIM). We then present our recent experimental study of the effects of the helium ion exposure on the carrier transport properties. By varying the time of helium ion bombardment onto a bilayer graphene nanoribbon transistor, the change in the transfer characteristics is investigated along with underlying carrier scattering mechanisms. Finally we study the effects of various single defects introduced into extremely-scaled armchair graphene nanoribbons on the carrier transport properties using ab initio simulation.",

keywords = "ab initio simulation, disorder, graphene, helium ion microscope, nanofabrication, nanoribbon, point defect, quantum dot",

author = "Hiroshi Mizuta and Zakaria Moktadir and Boden, {Stuart A.} and Nima Kalhor and Shuojin Hang and Schmidt, {Marek E.} and Cuong, {Nguyen Tien} and Chi, {Dam Hieu} and Nobuo Otsuka and Muruagnathan Manoharan and Yoshishige Tsuchiya and Harold Chong and Rutt, {Harvey N.} and Bagnall, {Darren M.}",

year = "2012",

doi = "10.1117/12.956439",

language = "English",

isbn = "9780819491794",

series = "Proceedings of SPIE",

publisher = "SPIE",

editor = "Didier Pribat and Young-Hee Lee and Manijeh Razeghi",

booktitle = "Carbon Nanotubes, Graphene, and Associated Devices V",

address = "United States",

note = "Carbon Nanotubes, Graphene, and Associated Devices V ; Conference date: 14-08-2012 Through 15-08-2012",

}

Mizuta, H, Moktadir, Z, Boden, SA, Kalhor, N, Hang, S, Schmidt, ME, Cuong, NT, Chi, DH, Otsuka, N, Manoharan, M, Tsuchiya, Y, Chong, H, Rutt, HN & Bagnall, DM 2012, Fabrication and ab initio study of downscaled graphene nanoelectronic devices. in D Pribat, Y-H Lee & M Razeghi (eds), Carbon Nanotubes, Graphene, and Associated Devices V., 846206, Proceedings of SPIE, vol. 8462, SPIE, Washington, Carbon Nanotubes, Graphene, and Associated Devices V, San Diego, CA, United States, 14/08/12. https://doi.org/10.1117/12.956439

Fabrication and ab initio study of downscaled graphene nanoelectronic devices. / Mizuta, Hiroshi; Moktadir, Zakaria; Boden, Stuart A. et al.
Carbon Nanotubes, Graphene, and Associated Devices V. ed. / Didier Pribat; Young-Hee Lee; Manijeh Razeghi. Washington: SPIE, 2012. 846206 (Proceedings of SPIE; Vol. 8462).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

TY - GEN

T1 - Fabrication and ab initio study of downscaled graphene nanoelectronic devices

AU - Mizuta, Hiroshi

AU - Moktadir, Zakaria

AU - Boden, Stuart A.

AU - Kalhor, Nima

AU - Hang, Shuojin

AU - Schmidt, Marek E.

AU - Cuong, Nguyen Tien

AU - Chi, Dam Hieu

AU - Otsuka, Nobuo

AU - Manoharan, Muruagnathan

AU - Tsuchiya, Yoshishige

AU - Chong, Harold

AU - Rutt, Harvey N.

AU - Bagnall, Darren M.

PY - 2012

Y1 - 2012

N2 - In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size helium ion beam. We address the issue of contamination caused by the electron-beam lithography process to pattern the contact metals prior to the ultrafine milling process in the helium ion microscope (HIM). We then present our recent experimental study of the effects of the helium ion exposure on the carrier transport properties. By varying the time of helium ion bombardment onto a bilayer graphene nanoribbon transistor, the change in the transfer characteristics is investigated along with underlying carrier scattering mechanisms. Finally we study the effects of various single defects introduced into extremely-scaled armchair graphene nanoribbons on the carrier transport properties using ab initio simulation.

AB - In this paper we first present a new fabrication process of downscaled graphene nanodevices based on direct milling of graphene using an atomic-size helium ion beam. We address the issue of contamination caused by the electron-beam lithography process to pattern the contact metals prior to the ultrafine milling process in the helium ion microscope (HIM). We then present our recent experimental study of the effects of the helium ion exposure on the carrier transport properties. By varying the time of helium ion bombardment onto a bilayer graphene nanoribbon transistor, the change in the transfer characteristics is investigated along with underlying carrier scattering mechanisms. Finally we study the effects of various single defects introduced into extremely-scaled armchair graphene nanoribbons on the carrier transport properties using ab initio simulation.

KW - ab initio simulation

KW - disorder

KW - graphene

KW - helium ion microscope

KW - nanofabrication

KW - nanoribbon

KW - point defect

KW - quantum dot

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U2 - 10.1117/12.956439

DO - 10.1117/12.956439

M3 - Conference proceeding contribution

AN - SCOPUS:84872121556

SN - 9780819491794

T3 - Proceedings of SPIE

BT - Carbon Nanotubes, Graphene, and Associated Devices V

A2 - Pribat, Didier

A2 - Lee, Young-Hee

A2 - Razeghi, Manijeh

PB - SPIE

CY - Washington

T2 - Carbon Nanotubes, Graphene, and Associated Devices V

Y2 - 14 August 2012 through 15 August 2012

ER -

Fabrication and ab initio study of downscaled graphene nanoelectronic devices

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Keywords

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