Fabrication and optical characterisation of InGaN/GaN nanorods

Xi Dai*, Xiaoming Wen, Michael Latzel, Martin Heilmann, Christian Appelt, Yu Feng, Jianfeng Yang, Weijian Chen, Shujuan Huang, Santosh Shrestha, Silke Christiansen, Gavin Conibeer

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

Abstract

We report the fabrication of densely packed InGaN/GaN nanorods with high hexagonal periodicity. Nanosphere lithography and reactive ion etching were adopted to fabricate the nanorods from planar multiple quantum wells (MQWs). Compared to the planar MQWs, the nanorods exhibit significant luminescence enhancement. This is mostly attributed to the increased radiative recombination and light extraction efficiency. Both photoluminescence and Raman measurements confirmed in-plane strain relaxation in the MQWs after nanofabrication. A reduction in strain-induced quantum confined Stark effect in the nanorods increased radiative recombination. This work is most crucial to the understanding of optical properties with respect to the carrier transport and recombination in InGaN/GaN nanorods.

Original languageEnglish
Title of host publicationMicro+Nano Materials, Devices, and Systems
EditorsBenjamin J. Eggleton, Stefano Palomba
Place of PublicationBellingham, WA
PublisherSPIE
Pages1-9
Number of pages9
ISBN (Electronic)9781628418903
DOIs
Publication statusPublished - 2015
Externally publishedYes
EventSPIE Micro+Nano Materials, Devices, and Applications Symposium - Sydney, Australia
Duration: 6 Dec 20159 Dec 2015

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume9668
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSPIE Micro+Nano Materials, Devices, and Applications Symposium
CountryAustralia
CitySydney
Period6/12/159/12/15

Keywords

  • Nanorods
  • Langmuir-Blodgett approach
  • reactive ion etching
  • cathodoluminescence
  • photoluminescence
  • Raman

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