Fabrication and photoluminescence studies of GaN nanopillars

N. Parvathala Reddy*, Shagufta Naureen, Fan Wang, Kaushal Vora, Naeem Shahid, Fouad Karouta, Hark Hoe Tan, Chennupati Jagadish

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

GaN nanopillar arrays are fabricated by inductively coupled plasma reactive ion etching (ICP-RIE) of lithographically patterned GaN epilayers grown on sapphire substrate. The morphology and optical quality of the nanopillars is investigated by scanning electron microscopy (SEM) and micro-photoluminescence (μ-PL) respectively. The PL intensity of the nanopillars is enhanced by a factor of more than four compared to that of the epitaxial layers. However, a small increase in the full width half maximum (FWHM) of the nanopillar PL spectra is observed.

Original languageEnglish
Title of host publicationCOMMAD 2014
Subtitle of host publicationConference on Optoelectronic and Microelectronic Materials and Devices
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages133-135
Number of pages3
ISBN (Electronic)9781479968688
ISBN (Print)9781479968671
DOIs
Publication statusPublished - 10 Feb 2014
Externally publishedYes
Event2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia
Duration: 14 Dec 201417 Dec 2014

Other

Other2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
CountryAustralia
CityPerth
Period14/12/1417/12/14

Keywords

  • Dry etching
  • GaN
  • ICP-RIE
  • nanopillar arrays
  • photoluminescence

Fingerprint Dive into the research topics of 'Fabrication and photoluminescence studies of GaN nanopillars'. Together they form a unique fingerprint.

Cite this