Fabrication of low-defect Ge-rich SiGe-on-insulator by continuous-wave diode laser-induced recrystallization

Ziheng Liu*, Shinyoung Noh, Xiaojing Hao, Jialiang Huang, Anita Ho-Baillie, Martin A. Green

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We develop a cost-effective, up-scalable and high-throughput method to fabricate low-defect Ge-rich SiGe-on-insulator (SGOI) through continuous-wave diode laser-induced recrystallization of sputtered Ge on Silicon–on-insulator (SOI). The successful formation of Ge-rich SGOI is revealed by Raman spectra and energy-dispersive X-ray spectroscopy mapping. Transmission electron microscopy measurements show that the fabricated SGOI has much lower dislocation density than the initial Ge film which may be attributed to two effects: i) laser-induced lateral recrystallization changing the mechanism from SiGe/Si hetero-epitaxy to SiGe/SiGe homo-epitaxy, ii) the fast regrowth rate and high thermal gradient producing vacancy supersaturation causing the movement of dislocations to lateral surfaces.

Original languageEnglish
Pages (from-to)679-682
Number of pages4
JournalJournal of Alloys and Compounds
Volume744
DOIs
Publication statusPublished - 5 May 2018
Externally publishedYes

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Keywords

  • Ge-rich SiGe-on-insulator
  • Continuous-wave diode laser
  • Recrystallization
  • Magnetron sputtering

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