Fabrication of single nickel-nitrogen defects in diamond by chemical vapor deposition

J. R. Rabeau, Y. L. Chin, S. Prawer, F. Jelezko, T. Gaebel, J. Wrachtrup

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Abstract

Fabrication of single nickel-nitrogen (NE8) defect centers in diamond by chemical vapor deposition is demonstrated. Under continuous-wave 745 nm laser excitation single defects were induced to emit single photon pulses at 797 nm with a linewidth of 1.5 nm at room temperature. Photon antibunching of single centers was demonstrated using a Hanbury-Brown and Twiss interferometer. Confocal images revealed approximately 106 optically active sites cm2 in the synthesized films. The controlled fabrication of an NE8 based single photon source in synthetic diamond is important for fiber based quantum cryptography, and potentially linear optics quantum computing.

Original languageEnglish
Article number131926
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number13
DOIs
Publication statusPublished - 28 Mar 2005
Externally publishedYes

Bibliographical note

Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied physics letters, Vol. 86, Issue 13, pp.131926, and may be found at http://link.aip.org/link/?apl/86/131926.

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