Fabrication of single photon centres in silicon carbide

B. C. Johnson, S. Castelletto, T. Ohshima, T. Umeda

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

1 Citation (Scopus)

Abstract

Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC) is reported. The photo-physical properties of the defect, having emission around 700 nm is presented.
Original languageEnglish
Title of host publication2012 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)
Subtitle of host publicationproceedings
Place of PublicationPiscataway, N.J.
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages217-218
Number of pages2
ISBN (Print)9781467330459
DOIs
Publication statusPublished - 2012
EventConference on Optoelectronic and Microelectronic Materials and Devices - Melbourne
Duration: 11 Dec 201214 Dec 2012

Conference

ConferenceConference on Optoelectronic and Microelectronic Materials and Devices
CityMelbourne
Period11/12/1214/12/12

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