Abstract
Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC) is reported. The photo-physical properties of the defect, having emission around 700 nm is presented.
Original language | English |
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Title of host publication | 2012 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD) |
Subtitle of host publication | proceedings |
Place of Publication | Piscataway, N.J. |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 217-218 |
Number of pages | 2 |
ISBN (Print) | 9781467330459 |
DOIs | |
Publication status | Published - 2012 |
Event | Conference on Optoelectronic and Microelectronic Materials and Devices - Melbourne Duration: 11 Dec 2012 → 14 Dec 2012 |
Conference
Conference | Conference on Optoelectronic and Microelectronic Materials and Devices |
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City | Melbourne |
Period | 11/12/12 → 14/12/12 |