Fabrication of single photon centres in silicon carbide

B. C. Johnson, S. Castelletto, T. Ohshima, T. Umeda

    Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

    1 Citation (Scopus)

    Abstract

    Bright room temperature single photon emission from isolated defects in bulk 4H silicon carbide (SiC) is reported. The photo-physical properties of the defect, having emission around 700 nm is presented.
    Original languageEnglish
    Title of host publication2012 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)
    Subtitle of host publicationproceedings
    Place of PublicationPiscataway, N.J.
    PublisherInstitute of Electrical and Electronics Engineers (IEEE)
    Pages217-218
    Number of pages2
    ISBN (Print)9781467330459
    DOIs
    Publication statusPublished - 2012
    EventConference on Optoelectronic and Microelectronic Materials and Devices - Melbourne
    Duration: 11 Dec 201214 Dec 2012

    Conference

    ConferenceConference on Optoelectronic and Microelectronic Materials and Devices
    CityMelbourne
    Period11/12/1214/12/12

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