Field effect transistor on hetero-structure GaN/InxGa 1-xN

Dimiter Alexandrov*, Rozalina Dimitrrova, K. Scott Butcher, Marie Wintrebert-Fouquet, Richard Perks

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

1 Citation (Scopus)

Abstract

Progress in the design of field effect transistor on heterostructure GaN/InxGa1-xN is reported in this paper. The transistor uses new principle for modulation of the channel conductivity based on tunnel injection of electrons or holes through hetero-junction. The vertical GaN/InxGa1-xN heterostructure is prepared to have both thickness ∼~50 μm and high specific resistance. The horizontal FET structure is prepared in order to achieve 1 μm gate length and 17 μm gate width. The technological methods used in the preparation of the FET structure are described The static current-voltage characteristics are determined. It is found that there is gate threshold voltage that varies in range 2.1-2.4 V for n-channel MOS and in range -3.3 -3.4 V for p-channel MOS. Also it is found that the drain current varies in the range ∼ 7 μA if the drain voltage is 5 V and the operational point is chosen to be 3.5 V of the gate voltage. Both parameters the dynamic channel resistance and the amplification factor are determined as well.

Original languageEnglish
Title of host publication2006 Canadian Conference on Electrical and Computer Engineering, CCECE'06
Place of PublicationNew York
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages537-540
Number of pages4
ISBN (Print)1424400384, 9781424400386
DOIs
Publication statusPublished - 2007
Event2006 Canadian Conference on Electrical and Computer Engineering, CCECE'06 - Ottawa, ON, Canada
Duration: 7 May 200610 May 2006

Other

Other2006 Canadian Conference on Electrical and Computer Engineering, CCECE'06
CountryCanada
CityOttawa, ON
Period7/05/0610/05/06

Keywords

  • Excitons
  • Field effect transistor

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