Abstract
In this paper we have proposed and studied a method of characterization of propagation behavior of an optically controlled Metal-Insulator-Semiconductor (MIS) slow wave line. The propagation behavior of such line under optical illumination has been studied by finite element method using ANSOFT's High Frequency Structure Simulator (HFSS). We have compared our results with analytical calculated one dimensional wave analysis. In this new method a wider MIS line advantageously approximated as a parallel plate waveguide structure. The MIS line has been simulated for perfect electric conductor (PEC) and non-perfect electric conductor Indium- Tin-Oxide (ITO) and in both cases the simulation results compare well with analytical results. The proposed structural analysis can be used as easy and time saving tool for optically controlled delay line and phase-shifter for different RF signal processing schemes.
| Original language | English |
|---|---|
| Pages (from-to) | 210-215 |
| Number of pages | 6 |
| Journal | International Journal of Microwave and Optical Technology |
| Volume | 10 |
| Issue number | 3 |
| Publication status | Published - 2015 |
| Externally published | Yes |
Keywords
- HFSS
- Lossy silicon
- MIS
- β/β0