Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy

B. Alén*, D. Fuster, G. Muñoz-Matutano, P. Alonso-González, J. Canet-Ferrer, J. Martínez-Pastor, I. Fernández-Martínez, M. Royo, J. I. Climente, Y. González, F. Briones, D. Hernández, S. I. Molina, L. González

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

Abstract

The emission properties of lateral and vertical QD pairs grown on GaAs nanoholes are investigated. Vertical QD pairs with different size asymmetry have been fabricated controlling the bottom QD size independently of the areal density. The emission of individual pairs is dominated by spectral diffusion effects and charge instabilities induced by the local charge environment. Lateral QD pairs have been fabricated on GaAs nanoholes and studied as a function of an electric field applied in the growth plane.

Original languageEnglish
Title of host publicationPhysics of Semiconductors
Subtitle of host publication30th International Conference on the Physics of Semiconductors
EditorsJisoon Ihm, Hyeonsik Cheong
Place of PublicationMelville, NY
PublisherAmerican Institute of Physics
Pages421-422
Number of pages2
ISBN (Print)9780735410022
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010

Publication series

NameAIP Conference Proceedings Series
Volume1399
ISSN (Electronic)0094-243X

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period25/07/1030/07/10

Keywords

  • droplet epitaxy
  • quantum dot molecules
  • single quantum dot spectroscopy

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