@inproceedings{a1cdde82d9e34e45b7f8c5a502ad9153,
title = "Formation and emission properties of single InGaAs/GaAs quantum dots and pairs grown by droplet epitaxy",
abstract = "The emission properties of lateral and vertical QD pairs grown on GaAs nanoholes are investigated. Vertical QD pairs with different size asymmetry have been fabricated controlling the bottom QD size independently of the areal density. The emission of individual pairs is dominated by spectral diffusion effects and charge instabilities induced by the local charge environment. Lateral QD pairs have been fabricated on GaAs nanoholes and studied as a function of an electric field applied in the growth plane.",
keywords = "droplet epitaxy, quantum dot molecules, single quantum dot spectroscopy",
author = "B. Al{\'e}n and D. Fuster and G. Mu{\~n}oz-Matutano and P. Alonso-Gonz{\'a}lez and J. Canet-Ferrer and J. Mart{\'i}nez-Pastor and I. Fern{\'a}ndez-Mart{\'i}nez and M. Royo and Climente, \{J. I.\} and Y. Gonz{\'a}lez and F. Briones and D. Hern{\'a}ndez and Molina, \{S. I.\} and L. Gonz{\'a}lez",
year = "2011",
doi = "10.1063/1.3666433",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings Series",
publisher = "American Institute of Physics",
pages = "421--422",
editor = "Jisoon Ihm and Hyeonsik Cheong",
booktitle = "Physics of Semiconductors",
address = "United States",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}