Formation of intermediate band in ZnTe:O highly mismatched alloy synthesized by ion implantation

J. D. Ye, K. Zhen, S. L. Gu, F. Wang, H. H. Tan, C. Jagadish

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contributionpeer-review

2 Citations (Scopus)

Abstract

ZnTe:O highly mismatched alloys have been produced by isoelectric oxygen implantation into ZnTe and the micro structural and optical properties of ZnTe:O materials have been investigated in detail. The proper dose of oxygen ions led to the formation of intermediate band located at the energy level of ∼0.45eV below the conduction band while high dose of oxygen ions caused an amorphous ZnTe surface layer and enhanced the deep level emission around 1.6eV. The results suggest that the reduction of lattice disorder is needed to convert localized states of intermediate band into extended states, which is crucial to realize high efficiency ZnTe:O based intermediate band solar cells.

Original languageEnglish
Title of host publicationCOMMAD 2014
Subtitle of host publicationConference on Optoelectronic and Microelectronic Materials and Devices
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages259-261
Number of pages3
ISBN (Electronic)9781479968671
DOIs
Publication statusPublished - 10 Feb 2014
Externally publishedYes
Event2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia
Duration: 14 Dec 201417 Dec 2014

Other

Other2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
CountryAustralia
CityPerth
Period14/12/1417/12/14

Keywords

  • highly mismatched alloy
  • II-VI semiconductors
  • intermediate band
  • ion implantation

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