Abstract
ZnTe:O highly mismatched alloys have been produced by isoelectric oxygen implantation into ZnTe and the micro structural and optical properties of ZnTe:O materials have been investigated in detail. The proper dose of oxygen ions led to the formation of intermediate band located at the energy level of ∼0.45eV below the conduction band while high dose of oxygen ions caused an amorphous ZnTe surface layer and enhanced the deep level emission around 1.6eV. The results suggest that the reduction of lattice disorder is needed to convert localized states of intermediate band into extended states, which is crucial to realize high efficiency ZnTe:O based intermediate band solar cells.
Original language | English |
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Title of host publication | COMMAD 2014 |
Subtitle of host publication | Conference on Optoelectronic and Microelectronic Materials and Devices |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 259-261 |
Number of pages | 3 |
ISBN (Electronic) | 9781479968671 |
DOIs | |
Publication status | Published - 10 Feb 2014 |
Externally published | Yes |
Event | 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014 |
Other
Other | 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 |
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Country/Territory | Australia |
City | Perth |
Period | 14/12/14 → 17/12/14 |
Keywords
- highly mismatched alloy
- II-VI semiconductors
- intermediate band
- ion implantation