Free-standing HVPE-GaN quasi-substrates: Impurity and strain distributions

T. Paskova*, P. P. Paskov, V. Darakchieva, E. M. Goldys, U. Södervall, E. Valcheva, B. Arnaudov, B. Monemar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We report a study of the physical properties of free-standing HVPE-GaN quasi-substrates. A variety of characterization techniques was employed in order to characterise in a comparative way the two sides of the films. The as-grown Ga-face was found to have lower density of both, structural and impurity defects. This leads to a lower concentration of free carriers and residual strain in the Ga-face compared to that in the N-face. The optical properties were found to be strongly influenced by the specific defect structure in both faces.

Original languageEnglish
Pages (from-to)209-213
Number of pages5
JournalPhysica Status Solidi C: Conferences
Issue number1
DOIs
Publication statusPublished - 2002

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