Free-standing HVPE-GaN quasi-substrates: Impurity and strain distributions

T. Paskova; P. P. Paskov; V. Darakchieva; E. M. Goldys; U. Södervall; E. Valcheva; B. Arnaudov; B. Monemar

doi:10.1002/pssc.200390025

Free-standing HVPE-GaN quasi-substrates: Impurity and strain distributions

T. Paskova^*, P. P. Paskov, V. Darakchieva, E. M. Goldys, U. Södervall, E. Valcheva, B. Arnaudov, B. Monemar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We report a study of the physical properties of free-standing HVPE-GaN quasi-substrates. A variety of characterization techniques was employed in order to characterise in a comparative way the two sides of the films. The as-grown Ga-face was found to have lower density of both, structural and impurity defects. This leads to a lower concentration of free carriers and residual strain in the Ga-face compared to that in the N-face. The optical properties were found to be strongly influenced by the specific defect structure in both faces.

Original language	English
Pages (from-to)	209-213
Number of pages	5
Journal	Physica Status Solidi C: Conferences
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200390025
Publication status	Published - 2002

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10.1002/pssc.200390025

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abstract = "We report a study of the physical properties of free-standing HVPE-GaN quasi-substrates. A variety of characterization techniques was employed in order to characterise in a comparative way the two sides of the films. The as-grown Ga-face was found to have lower density of both, structural and impurity defects. This leads to a lower concentration of free carriers and residual strain in the Ga-face compared to that in the N-face. The optical properties were found to be strongly influenced by the specific defect structure in both faces.",

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T2 - Impurity and strain distributions

AU - Paskova, T.

AU - Paskov, P. P.

AU - Darakchieva, V.

AU - Goldys, E. M.

AU - Södervall, U.

AU - Valcheva, E.

AU - Arnaudov, B.

AU - Monemar, B.

PY - 2002

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N2 - We report a study of the physical properties of free-standing HVPE-GaN quasi-substrates. A variety of characterization techniques was employed in order to characterise in a comparative way the two sides of the films. The as-grown Ga-face was found to have lower density of both, structural and impurity defects. This leads to a lower concentration of free carriers and residual strain in the Ga-face compared to that in the N-face. The optical properties were found to be strongly influenced by the specific defect structure in both faces.

AB - We report a study of the physical properties of free-standing HVPE-GaN quasi-substrates. A variety of characterization techniques was employed in order to characterise in a comparative way the two sides of the films. The as-grown Ga-face was found to have lower density of both, structural and impurity defects. This leads to a lower concentration of free carriers and residual strain in the Ga-face compared to that in the N-face. The optical properties were found to be strongly influenced by the specific defect structure in both faces.

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DO - 10.1002/pssc.200390025

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JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 1

ER -

Free-standing HVPE-GaN quasi-substrates: Impurity and strain distributions

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