Full ETSI E-band doubler, quadrupler and 24 dBm power amplifier

Melissa C. Rodriguez*, Jabra Tarazi, Anna Dadello, Emmanuelle R O Convert, MacCrae G. McCulloch, Simon J. Mahon, Steve Hwang, Rodney G. Mould, Anthony P. Fattorini, Alan C. Young, James T. Harvey, Anthony E. Parker, Michael C. Heimlich, Wen Kai Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference proceeding contribution

7 Citations (Scopus)

Abstract

A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. The doubler and quadrupler circuits include medium power amplifiers to increase their gain and output power. The doubler has a measured output power greater than 15 dBm over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The quadrupler has similar output power over the ETSI E bands with a maximum output power of 19.2 dBm. The power amplifier has a maximum measured output power of 24.2 dBm (265 mW) and exceeds 23 dBm (200 mW) over the ETSI E bands. This amplifier has a measured small signal gain of 15 dB and the input and output return losses exceed 15 dB. Its measured PAE is above 8% across the ETSI E bands. This is the highest saturated output power (Psat) and PAE for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. Good agreement is demonstrated between measurement and simulation.

Original languageEnglish
Title of host publication2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest
Place of PublicationPiscataway, NJ
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Pages1-4
Number of pages4
ISBN (Electronic)9781467309295
ISBN (Print)9781467309288
DOIs
Publication statusPublished - 2012
Event2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - La Jolla, CA, United States
Duration: 14 Oct 201217 Oct 2012

Other

Other2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012
CountryUnited States
CityLa Jolla, CA
Period14/10/1217/10/12

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    Rodriguez, M. C., Tarazi, J., Dadello, A., Convert, E. R. O., McCulloch, M. G., Mahon, S. J., ... Wang, W. K. (2012). Full ETSI E-band doubler, quadrupler and 24 dBm power amplifier. In 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest (pp. 1-4). [6340084] Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/CSICS.2012.6340084