Abstract
A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. The doubler and quadrupler circuits include medium power amplifiers to increase their gain and output power. The doubler has a measured output power greater than 15 dBm over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The quadrupler has similar output power over the ETSI E bands with a maximum output power of 19.2 dBm. The power amplifier has a maximum measured output power of 24.2 dBm (265 mW) and exceeds 23 dBm (200 mW) over the ETSI E bands. This amplifier has a measured small signal gain of 15 dB and the input and output return losses exceed 15 dB. Its measured PAE is above 8% across the ETSI E bands. This is the highest saturated output power (Psat) and PAE for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. Good agreement is demonstrated between measurement and simulation.
Original language | English |
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Title of host publication | 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest |
Place of Publication | Piscataway, NJ |
Publisher | Institute of Electrical and Electronics Engineers (IEEE) |
Pages | 1-4 |
Number of pages | 4 |
ISBN (Electronic) | 9781467309295 |
ISBN (Print) | 9781467309288 |
DOIs | |
Publication status | Published - 2012 |
Event | 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - La Jolla, CA, United States Duration: 14 Oct 2012 → 17 Oct 2012 |
Other
Other | 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 |
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Country/Territory | United States |
City | La Jolla, CA |
Period | 14/10/12 → 17/10/12 |