Full ETSI E-band doubler, quadrupler and 24 dBm power amplifier

Melissa C. Rodriguez; Jabra Tarazi; Anna Dadello; Emmanuelle R O Convert; MacCrae G. McCulloch; Simon J. Mahon; Steve Hwang; Rodney G. Mould; Anthony P. Fattorini; Alan C. Young; James T. Harvey; Anthony E. Parker; Michael C. Heimlich; Wen Kai Wang

doi:10.1109/CSICS.2012.6340084

Full ETSI E-band doubler, quadrupler and 24 dBm power amplifier

Melissa C. Rodriguez^*, Jabra Tarazi, Anna Dadello, Emmanuelle R O Convert, MacCrae G. McCulloch, Simon J. Mahon, Steve Hwang, Rodney G. Mould, Anthony P. Fattorini, Alan C. Young, James T. Harvey, Anthony E. Parker, Michael C. Heimlich, Wen Kai Wang

^*Corresponding author for this work

School of Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

8 Citations (Scopus)

Abstract

A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. The doubler and quadrupler circuits include medium power amplifiers to increase their gain and output power. The doubler has a measured output power greater than 15 dBm over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The quadrupler has similar output power over the ETSI E bands with a maximum output power of 19.2 dBm. The power amplifier has a maximum measured output power of 24.2 dBm (265 mW) and exceeds 23 dBm (200 mW) over the ETSI E bands. This amplifier has a measured small signal gain of 15 dB and the input and output return losses exceed 15 dB. Its measured PAE is above 8% across the ETSI E bands. This is the highest saturated output power (Psat) and PAE for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. Good agreement is demonstrated between measurement and simulation.

Original language	English
Title of host publication	2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest
Place of Publication	Piscataway, NJ
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781467309295
ISBN (Print)	9781467309288
DOIs	https://doi.org/10.1109/CSICS.2012.6340084
Publication status	Published - 2012
Event	2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - La Jolla, CA, United States Duration: 14 Oct 2012 → 17 Oct 2012

Other

Other	2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012
Country/Territory	United States
City	La Jolla, CA
Period	14/10/12 → 17/10/12

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10.1109/CSICS.2012.6340084

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Rodriguez, M. C., Tarazi, J., Dadello, A., Convert, E. R. O., McCulloch, M. G., Mahon, S. J., Hwang, S., Mould, R. G., Fattorini, A. P., Young, A. C., Harvey, J. T., Parker, A. E., Heimlich, M. C., & Wang, W. K. (2012). Full ETSI E-band doubler, quadrupler and 24 dBm power amplifier. In 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest (pp. 1-4). Article 6340084 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/CSICS.2012.6340084

@inproceedings{27740dd22c7543a3adb9d7425abafc53,

title = "Full ETSI E-band doubler, quadrupler and 24 dBm power amplifier",

abstract = "A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. The doubler and quadrupler circuits include medium power amplifiers to increase their gain and output power. The doubler has a measured output power greater than 15 dBm over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The quadrupler has similar output power over the ETSI E bands with a maximum output power of 19.2 dBm. The power amplifier has a maximum measured output power of 24.2 dBm (265 mW) and exceeds 23 dBm (200 mW) over the ETSI E bands. This amplifier has a measured small signal gain of 15 dB and the input and output return losses exceed 15 dB. Its measured PAE is above 8\% across the ETSI E bands. This is the highest saturated output power (Psat) and PAE for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. Good agreement is demonstrated between measurement and simulation.",

author = "Rodriguez, \{Melissa C.\} and Jabra Tarazi and Anna Dadello and Convert, \{Emmanuelle R O\} and McCulloch, \{MacCrae G.\} and Mahon, \{Simon J.\} and Steve Hwang and Mould, \{Rodney G.\} and Fattorini, \{Anthony P.\} and Young, \{Alan C.\} and Harvey, \{James T.\} and Parker, \{Anthony E.\} and Heimlich, \{Michael C.\} and Wang, \{Wen Kai\}",

year = "2012",

doi = "10.1109/CSICS.2012.6340084",

language = "English",

isbn = "9781467309288",

pages = "1--4",

booktitle = "2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

address = "United States",

note = "2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 ; Conference date: 14-10-2012 Through 17-10-2012",

}

Rodriguez, MC, Tarazi, J, Dadello, A, Convert, ERO, McCulloch, MG, Mahon, SJ, Hwang, S, Mould, RG, Fattorini, AP, Young, AC, Harvey, JT, Parker, AE, Heimlich, MC & Wang, WK 2012, Full ETSI E-band doubler, quadrupler and 24 dBm power amplifier. in 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest., 6340084, Institute of Electrical and Electronics Engineers (IEEE), Piscataway, NJ, pp. 1-4, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, La Jolla, CA, United States, 14/10/12. https://doi.org/10.1109/CSICS.2012.6340084

Full ETSI E-band doubler, quadrupler and 24 dBm power amplifier. / Rodriguez, Melissa C.; Tarazi, Jabra; Dadello, Anna et al.
2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest. Piscataway, NJ: Institute of Electrical and Electronics Engineers (IEEE), 2012. p. 1-4 6340084.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding contribution › peer-review

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AU - Mahon, Simon J.

AU - Hwang, Steve

AU - Mould, Rodney G.

AU - Fattorini, Anthony P.

AU - Young, Alan C.

AU - Harvey, James T.

AU - Parker, Anthony E.

AU - Heimlich, Michael C.

AU - Wang, Wen Kai

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AB - A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. The doubler and quadrupler circuits include medium power amplifiers to increase their gain and output power. The doubler has a measured output power greater than 15 dBm over the entire 15 GHz bandwidth of the European Telecommunications Standards Institute (ETSI) E-band specification. The quadrupler has similar output power over the ETSI E bands with a maximum output power of 19.2 dBm. The power amplifier has a maximum measured output power of 24.2 dBm (265 mW) and exceeds 23 dBm (200 mW) over the ETSI E bands. This amplifier has a measured small signal gain of 15 dB and the input and output return losses exceed 15 dB. Its measured PAE is above 8% across the ETSI E bands. This is the highest saturated output power (Psat) and PAE for a power amplifier spanning the full 71 to 86 GHz span of the ETSI E bands for any semiconductor system. Good agreement is demonstrated between measurement and simulation.

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M3 - Conference proceeding contribution

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BT - 2012 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012 - Technical Digest

PB - Institute of Electrical and Electronics Engineers (IEEE)

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ER -

Full ETSI E-band doubler, quadrupler and 24 dBm power amplifier

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